Product Information

US6K2TR

US6K2TR electronic component of ROHM

Datasheet
ROHM Semiconductor MOSFET 2N-CH 30V 1.4A

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1933 ea
Line Total: USD 0.97

1896 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1896 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 5
Multiples : 5

Stock Image

US6K2TR
ROHM

5 : USD 0.1933
50 : USD 0.1702
150 : USD 0.1603
500 : USD 0.148
3000 : USD 0.1424
6000 : USD 0.1392

5653 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

US6K2TR
ROHM

1 : USD 0.6026
10 : USD 0.5267
100 : USD 0.3726
500 : USD 0.3209
1000 : USD 0.2795
3000 : USD 0.2381
6000 : USD 0.2369

2939 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 196
Multiples : 1

Stock Image

US6K2TR
ROHM

196 : USD 0.2003
200 : USD 0.1988
500 : USD 0.179
1000 : USD 0.172

920 - WHS 4


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 254
Multiples : 1

Stock Image

US6K2TR
ROHM

254 : USD 0.3791

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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US6K2 Datasheet Nch+Nch 30V 1.4A Small Signal MOSFET llOutline SOT-363T V 30V DSS R (Max.) 240m DS(on) TUMT6 I 1.4A D P 1.0W D llFeatures llInner circuit 1) Low on - resistance. 2) -4V Drive. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TUMT6). 5) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 180 Switching Tape width (mm) 8 Type Basic ordering unit (pcs) 3000 Taping code TR Marking K02 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS Continuous drain current I 1.4 A D *1 I Pulsed drain current 5.6 A DP V Gate - Source voltage 20 V GSS total 1.0 *2 P D Power dissipation element 0.7 W *3 P total 0.91 D T Junction temperature 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 1/11 20160727 - Rev.001 US6K2 Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. total - - 125 *2 R thJA Thermal resistance, junction - ambient element - - 179 /W *3 R total - - 137 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 29.0 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 0V, V = 20V - - 10 A GSS DS GS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 1.4A - 170 240 GS D Static drain - source *4 R V = 4.5V, I = 1.4A - 250 350 m DS(on) GS D on - state resistance V = 4.0V, I = 1.4A - 270 380 GS D Gate resistance R f = 1MHz, open drain - 20 - G Forward Transfer *4 Y V = 10V, I = 1.4A 1 - - S fs DS D Admittance www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/11 20160727 - Rev.001

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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