Product Information

NTA4151PT1G

NTA4151PT1G electronic component of ON Semiconductor

Datasheet
MOSFET -20V -760mA PChannel
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.092 ea
Line Total: USD 0.46

68685 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
68685 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 5
Multiples : 5

Stock Image

NTA4151PT1G
ON Semiconductor

5 : USD 0.092
50 : USD 0.075
150 : USD 0.0665
500 : USD 0.0601
3000 : USD 0.0491
6000 : USD 0.0466

29100 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 3000

Stock Image

NTA4151PT1G
ON Semiconductor

3000 : USD 0.066
6000 : USD 0.0588
12000 : USD 0.0576

37946 - WHS 3


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 341
Multiples : 1

Stock Image

NTA4151PT1G
ON Semiconductor

341 : USD 0.1075
500 : USD 0.1006
1000 : USD 0.0937
3000 : USD 0.0869
6000 : USD 0.0853

288090 - WHS 4


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 3000

Stock Image

NTA4151PT1G
ON Semiconductor

3000 : USD 0.0631
6000 : USD 0.0561
12000 : USD 0.055

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Category
Brand Category
LoadingGif

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Additional Infomation About Product

The NTA4151PT1G from ON Semiconductor is a P-Channel enhancement mode Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with a maximum drain-source voltage rating of -20V and a maximum drain current of -760mA. This device is designed to control power switching applications. The low on-state resistance of this MOSFET helps to reduce conduction losses in the circuit while its fast switching performance makes it suitable for a wide range of applications. Additionally, it is designed with a Gate-Source Voltage (VGS) of -15V and a Gate-Source Leakage Current (IDSS) of 14uA. This MOSFET is RoHS compliant and available in an SC-78 (TO-252AA) package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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OOF
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