ZDX130N50 Nch 500V 13A Power MOSFET Datasheet l Outline V 500V DSS TO-220FM R (Max.) 0.52W DS(on) (3) I -13A D (2) (1) P 40W D l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (V ) guaranteed to be 30V. GSS 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead plating RoHS compliant lPackaging specifications Packaging Bulk Reel size (mm) - lApplication Tape width (mm) - Switching Power Supply Type Basic ordering unit (pcs) 500 Taping code - Marking ZDX130N50 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 500 V DSS *1 T = 25C Continuous drain current I 13 A c D *2 Pulsed drain current A I 39 D,pulse V Gate - Source voltage 30 V GSS Power dissipation (T = 25C) P 40 W c D Junction temperature T 150 C j T Range of storage temperature -55 to +150 C stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.B 1/11 Not Recommended for New DesignsData Sheet ZDX130N50 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 3.125 C/W Thermal resistance, junction - ambient thJA lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 500 - - V (BR)DSS GS D voltage Zero gate voltage drain current I V = 500V, V = 0V - 100 mA DSS DS GS I Gate - Source leakage current V = 30V, V = 0V - - 100 nA GSS GS DS V V = 10V, I = 1mA Gate threshold voltage 2.5 - 4.5 V GS (th) DS D Static drain - source *3 V = 10V, I = 6.5A R - 0.4 0.52 W GS D DS(on) on - state resistance www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2012.08 - Rev.B 2/11 Not Recommended for New Designs