SCT10N120H STMicroelectronics

SCT10N120H Datasheet Silicon carbide Power MOSFET 1200 V, 13 A, 500 m (typ., T =25 C), in an HPAK-2 package J Features TAB Very tight variation of on-resistance vs temperature Very high operating temperature capability (T = 175 C) J Very fast and robust intrinsic body diode 2 3 Low capacitance 1 2 H PAK-2 Application High voltage DC-DC converters Switch mode power supplies D(TAB) Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per G(1) unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allow designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. S(2,3) NCHG1DTABS23 Product status link SCT10N120H Product summary Order code SCT10N120H Marking SCT10N120 2 Package H PAK-2 Packing Tape and reel DS13479 - Rev 1 - October 2020 www.st.com For further information contact your local STMicroelectronics sales office.SCT10N120H Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 1200 V DS V Gate-source voltage -10 to 25 V GS I Drain current (continuous) at T = 25 C 13 A D C I Drain current (continuous) at T = 100 C 10 A D C (1) I Drain current (pulsed) 30 A DM P Total power dissipation at T = 25 C 130 W TOT C T Storage temperature range C stg -55 to 175 T Operating junction temperature range C j 1. Pulse width limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case 1.17 C/W (1) R Thermal resistance junction-pcb 40 C/W thj-pcb 1. When mounted on 1 inch FR-4 board, 2 oz Cu. DS13479 - Rev 1 page 2/15