X-On Electronics has gained recognition as a prominent supplier of CA339AG across the USA, India, Europe, Australia, and various other global locations. CA339AG are a product manufactured by Semiconductors. We provide cost-effective solutions for CA339AG, ensuring timely deliveries around the world.

CA339AG Semiconductors

CA339AG electronic component of Semiconductors
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Part No. CA339AG
Manufacturer: Semiconductors
Category: Unclassified
Description: CA339AG
CA339AG is a high-performance 4-channel audio amplifier IC.
Datasheet:
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 47.8275 ea
Line Total: USD 47.83 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 19 Jun to Wed. 25 Jun
MOQ : 1
Multiples : 1
1 : USD 47.8275
5 : USD 26.88

   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the CA339AG from our Semiconductors manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CA339AG and other electronic components in the Semiconductors manufacturer and beyond.

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CA339AG is a high performance P-Channel Enhancement Mode Field Effect Transistor (MOSFET) manufactured by Toshiba Semiconductor. It is a very small package, surface mount device. It is a deeply depleted MOSFET, with a breakdown voltage (VBR) of 600V and a low on-resistance (RDS(on)) of only 2 mO. It is ideal for high efficiency DC/DC converters, and power supply solutions. Its very low gate charge and low threshold voltage allows for efficient switching and low power consumption.

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