X-On Electronics has gained recognition as a prominent supplier of GCMS040A120S1-E1 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. GCMS040A120S1-E1 Discrete Semiconductor Modules are a product manufactured by SemiQ. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

GCMS040A120S1-E1 SemiQ

GCMS040A120S1-E1 electronic component of SemiQ
GCMS040A120S1-E1 SemiQ
GCMS040A120S1-E1 Discrete Semiconductor Modules
GCMS040A120S1-E1  Semiconductors

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See Product Specifications
Part No. GCMS040A120S1-E1
Manufacturer: SemiQ
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules SiC MOSFETSBD Module SOT-227 Copak 1200V 40 mohm
Datasheet: GCMS040A120S1-E1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 78.5135
10 : USD 67.8231
50 : USD 67.1415
100 : USD 67.1415
200 : USD 65.7214
500 : USD 64.5512
N/A

Obsolete
   
Manufacturer
Product Category
Product
Type
Vf - Forward Voltage
Vr - Reverse Voltage
Vgs - Gate-Source Voltage
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Technology
Hts Code
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GCMS040A120S1-E1 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GCMS040A120S1-E1 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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PreliminaryDatasheet GCMS040A120S1E1 V = 1200V 1200V/40 m SiC MOSFET CES 0 I = 40A T = 80 C D C in SOT-227 Package 0 R = 40 mohm T = 25 C DS ON J Features HighspeedswitchingSiCMOSFETs Freewheelingdiodewithzeroreverserecovery SiCSBDs LowR DS ON Simpletodrive Kelvinreferenceforstablegatedriving Highjunctiontemperatureoperation Positivetemperaturecoefficientforeasyto parallelmounting Applications PhotoVoltaicInverter Aerospaceactuators ServerPowersupplies HighvoltageAC/DCConverter Benefits Outstandingpowerconversionefficiencyat highswitchingfrequencyoperation LowswitchinglossesandLowEMInoises Veryruggedandeasymount Directmountingtoheatsink(isolatedpackage) Lowjunctiontocasethermalresistance EasyparallelingduetopositiveTCofVF RoHSCompliant Page1of9 Rev.0.3 05/27/2020PreliminaryDatasheet GCMS040A120S1E1 o Absolute Maximum Ratings (T=25 C unless otherwise specified) j Parameters Symbol Conditions Specifications Units SiCMOSFETs 0 0 MaximumDrainSourceVoltage V T =25 C~150 C 1200 V DSS j 0 ContinuousDrainCurrent I T =25 C,V =20V 60 A D(DC) j GS 0 T =150 C,V =20V 40 A j GS I PulseDrainCurrent Pulsewidtht limitedby D(Pulse) P 160 A 0 T ,T =25 C jmax C GateSourceVoltage V Absolutemaxvalue10/+25 V GS SiCSBDs MaximumReverseVoltage V 1200 V RRM 0 AverageForwardCurrent I T =25 C 30 A DAV j 0 T =150 C 15 A j I NonrepetitiveForwardSurgeCurrent Pulsewidtht limitedby FSM P 60 A T jmax SOT227ModulesThermalProperties 0 MaximumPowerDissipation P T =25 C TBD W D C 0 T =100 C TBD W C 0 OperatingJunctionTemperature T 40~150 C j 0 StorageTemperature T 40~150 C STG o Electrical Characteristics (T =25 C unless otherwise specified) j Parameters Symbol Conditions Min Typ Max Units SiCMOSFETs DrainSourceBreakdownVoltage V V =0V,I =100A 1200 V (BR)DSS GS D 0 GateThresholdVoltage V V =10V,I =10mA,T =25 C 2.4 2.8 V GS(TH) DS D j -- 0 V =10V,I =10mA,T =150 C 1.8 2.0 V DS D j -- 0 ZeroGateVoltageDrainCurrent I V =1200V,V =0V,T =25 C DSS DS GS j 1 100 0 V =1200V,V =0V,T =150 C DS GS j TBD TBD GateSourceLeakageCurrent I V =20V,V =0V n GSS GS DS 250 InternalGateResistance R f=1MHz,V =25mV,perdie 1.8 G AC 0 DrainSourceOnstateResistance R V =20V,I =40A,T =25 C 40 52 m DS(ON) GS D j 0 V =20V,I =40A,T =150 C 84 100 m GS D j 0 Transconductance g V =20V,I =40A,T =25 C S fs DS D j 15 0 V =20V,I =40A,T =150 C 13 DS D j InputCapacitance C V =0V,V =1000V,freq= nF ISS GS DS 1.9 1MHz,V =25mV AC OutputCapacitance C pF 150 OSS Page2of9 Rev.0.3 05/27/2020

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8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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