Product Information

SVD50N06T

SVD50N06T electronic component of Silan

Datasheet
MOSFET N Trench 60V 50A (Tc) 4V @ 250uA 23 mΩ @ 25A,10V TO-220 RoHS
Manufacturer: Silan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5134 ea
Line Total: USD 0.51

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Wed. 05 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1

Stock Image

SVD50N06T
Silan

1 : USD 0.532
10 : USD 0.4233
50 : USD 0.379
100 : USD 0.3214
500 : USD 0.2947
1000 : USD 0.2792

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The SVD50N06T is a MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by Silan with N Trench technology. It is an enhancement mode power transistor designed for switching or amplifying, operating at a maximum power rating of 60 volts at 50 amps, with a maximum on-state resistance of 23 milliohms at 25 amps. Its maximum thermal resistance (Tc) is 4 volts at a gate current of 250 microamps. Additionally, it is housed in a RoHS-compliant TO-220 package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Silan may also be referenced as

Hangzhou Silan Microelectronics

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