Product Information

SVF12N65F(S)

SVF12N65F(S) electronic component of Silan

Datasheet
TO-220F-3 MOSFETs ROHS

Manufacturer: Silan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7453 ea
Line Total: USD 0.75

19522 - Global Stock
Ships to you between
Tue. 14 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10766 - WHS 1


Ships to you between
Tue. 14 May to Fri. 17 May

MOQ : 1
Multiples : 1
1 : USD 0.7554
10 : USD 0.6225
50 : USD 0.554
100 : USD 0.4875
500 : USD 0.4472
1000 : USD 0.4271

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
LoadingGif

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The SVF12N65F(S) with TO-220F-3 is a metal-oxide semiconductor field-effect transistor (MOSFET) that is ROHS compliant and manufactured by Silan Corporation. It is a high voltage, fast switching device with low on-resistance and low gate charge. It features a Vds max of 600V and a Rds(on) max of 1.4 m?. It has a maximum junction temperature of 175°C and a Pd max of 1.47 W. This component is suitable for high frequency inverters, conversion, and motor control applications in off-line and DC-DC converter designs. It has a low gate output capacitance and a low gate threshold voltage for fast switching. The package offers a high power dissipation and excellent thermal performance. The package is designed for low profile applications and the die-attach flange covers the die surface.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Hangzhou Silan Microelectronics

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