Product Information

SVF4N60CAD

SVF4N60CAD electronic component of Silan

Datasheet
TO-252-3 MOSFETs ROHS
Manufacturer: Silan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.355 ea
Line Total: USD 1.78

2216 - Global Stock
Ships to you between
Tue. 14 May to Fri. 17 May
MOQ: 5  Multiples: 5
Pack Size: 5

 More Buying Options & Price Grid(s)

Availability Price Quantity
1876 - WHS 1


Ships to you between
Tue. 14 May to Fri. 17 May

MOQ : 5
Multiples : 5
5 : USD 0.2729
50 : USD 0.2381
150 : USD 0.2233
500 : USD 0.2048
2500 : USD 0.1966
5000 : USD 0.1916

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
LoadingGif

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Additional Infomation About Product

The Silan SVF4N60CAD MOSFET is a 4th generation, bottom-gate metal-oxide-semiconductor field-effect transistor (MOSFET) designed for use in high-power switching applications. It features a TO-252-3 surface mount package and is RoHS compliant. This N-Channel MOSFET offers excellent power efficiency due to its low on-resistance, low gate input capacitance, and low gate charge. The high drain-source breakdown voltage of 600V makes it suitable for applications that require high voltage switching. It also provides a fast switching speed in order to minimize power losses and EMI/RFI noise. Its wide operating temperature range from -55°C to 175°C make it suitable for a variety of applications, including in motor control and UPS systems, automotive electronics, and more.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Silan may also be referenced as

Hangzhou Silan Microelectronics

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