Product Information

SVF1N60B

Name: SVF1N60B
Brand: Silan
SKU: SVF1N60B_Silan
Availability: OutOfStock
Rating: 5 (11 reviews)

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Datasheet

MOSFET N Trench 600V 1A (Tc) 4V @ 250uA 11 Î© @ 500mA,10V TO-92-3L RoHS

Manufacturer: Silan

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.1494 ea
Line Total: USD 0.75

0 - Global Stock

MOQ: 5 Multiples: 5
Pack Size: 5

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Thu. 30 May to Tue. 04 Jun MOQ : 5 Multiples : 5 SVF1N60B Silan	5 : USD 0.1494 50 : USD 0.124 150 : USD 0.1057 500 : USD 0.0906 2500 : USD 0.088 5000 : USD 0.0868

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Additional Infomation About Product

The SVF1N60B is a metal-oxide-semiconductor field-effect transistor (MOSFET) manufactured by Silan. It is a N Trench type transistor designed for improved performance in high voltage switching applications such as motor control circuits, relays, and motor controllers. It has a maximum drain-source voltage (Vds) of 600V and maximum drain current (Id) of 1A (Tc), a low threshold voltage (Vgs) of 4V @ 250uA, an Rds(on) of 11 Î© @ 500mA, and a maximum gate voltage (Vgs) of 10V. It is packaged in a TO-92-3L RoHS compliant plastic case.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Silan may also be referenced as

Hangzhou Silan Microelectronics

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Manufacturer Silan Silan
Product Category MOSFET MOSFET
Drain Source Voltage Vdss 600 V 600 V
Continuous Drain Current Id 1 A 1 A
Drain Source On Resistance Rdson@Vgs Id 11 Ohms @10V , 500mA 11 Ohms @10V , 500mA
Power Dissipation Pd 9 W 9 W
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Type N Channel N Channel