Product Information

SVF1N60AH

Name: SVF1N60AH
Brand: Silan
SKU: SVF1N60AH_Silan
Availability: OutOfStock
Rating: 5 (11 reviews)

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Datasheet

MOSFET N Channel 600V 1A(Tc) 4V @ 250uA 8.1O @ 500mA,10V SOT-223-3L RoHS

Manufacturer: Silan

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.1342 ea
Line Total: USD 0.67

0 - Global Stock

MOQ: 5 Multiples: 5
Pack Size: 5

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 17 May to Wed. 22 May MOQ : 5 Multiples : 5 SVF1N60AH Silan	5 : USD 0.1342 50 : USD 0.1118 150 : USD 0.0954 500 : USD 0.0821 2500 : USD 0.0798 5000 : USD 0.0787

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Additional Infomation About Product

The Silan SVF1N60AH is a MOSFET N-channel transistor with 600-volt blocking voltage, 1-ampere continuous drain current (Tc), and 4-volt gate-source breakdown voltage. It also has a low on-state resistance of 8.1 ohms at 500 milliamperes, 10-volt drain-source breakdown voltage, and an SOT-223-3L package type. This RoHS-compliant device is suitable for automotive applications such as switching, and also for high-frequency circuits where power losses need to be minimised.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Silan may also be referenced as

Hangzhou Silan Microelectronics

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Manufacturer Silan Silan
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package SOT - 223 - 3L SOT - 223 - 3L
Brand Category Silan Silan
Fet Type NChannel NChannel
Drain To Source Voltagevdss 600 V 600 V
Continuous Drain Current Id @ 25°C 1 A (T C) 1 A (T C)
Vgsth Max @ Id 4V @ 250uA 4V @ 250uA
Rds On Max @ Id Vgs 8.1O @ 500mA,10V 8.1O @ 500mA,10V
Power Dissipation-Max Ta 25°C 22 W (Tc) 22 W (Tc)
Drain Source Voltage Vdss 600 V 600 V
Continuous Drain Current Id 1 A 1 A
Drain Source On Resistance Rdson@Vgs Id 8.1 Ohms @10V , 500mA 8.1 Ohms @10V , 500mA
Power Dissipation Pd 22 W 22 W
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Type N Channel N Channel