Product Information

SVF4N60CAMJ

Name: SVF4N60CAMJ
Brand: Silan
SKU: SVF4N60CAMJ_Silan
Availability: OutOfStock
Rating: 5 (11 reviews)

SVF4N60CAMJ electronic component of Silan

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Datasheet

MOSFET N Trench 600V 4A 4V @ 250uA 2.4 Î© @ 2A,10V TO-251 RoHS

Manufacturer: Silan

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.3507 ea
Line Total: USD 0.35

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 04 Jun to Fri. 07 Jun MOQ : 1 Multiples : 1 SVF4N60CAMJ Silan	1 : USD 0.3507 10 : USD 0.2904 30 : USD 0.2468 100 : USD 0.2107 500 : USD 0.2046 1000 : USD 0.2016

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Additional Infomation About Product

The SVF4N60CAMJ with MOSFET N Trench 600V 4A 4V @ 250uA 2.4O @ 2A, 10V TO-251 RoHS is a MOSFET N-channel enhancement type Transistor made by the Chinese manufacturer Silan. It has a voltage rating of 600 volts with a current rating of 4 amperes and a maximum DC gate to source voltage of 4 volts. It has a low gate charge of 250uA and a low on-state resistance of 2.4O at 2A and 10V. It is packaged in a standard TO-251 RoHS-compliant package which is small and has excellent thermal resistance. It is suitable for use in power switching applications, DC/DC converters, load switches, battery protection etc.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Silan may also be referenced as

Hangzhou Silan Microelectronics

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Manufacturer Silan Silan
Product Category MOSFET MOSFET
Brand Silan Silan
Rohs Y Y
Package TO - 251 TO - 251
Fet Type N Channel N Channel
Drain To Source Voltagevdss 600 V 600 V
Continuous Drain Current Id @ 25°C 4 A 4 A
Vgsth Max @ Id 4V @ 250uA 4V @ 250uA
Rds On Max @ Id Vgs 2.4O @ 2A,10V 2.4O @ 2A,10V
Power Dissipation-Max Ta 25°C 86 W 86 W
Drain Source Voltage Vdss 600 V 600 V
Continuous Drain Current Id 4 A 4 A
Drain Source On Resistance Rdson@Vgs Id 2.4 Ohms @10V , 2A 2.4 Ohms @10V , 2A
Power Dissipation Pd 86 W 86 W
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Type N Channel N Channel