Product Information

SVF7N65CMJ

SVF7N65CMJ electronic component of Silan

Datasheet
MOSFET N Trench 650V 7A (Tc) 4V @ 250uA 1.4 Ω @ 3.5A,10V TO-251J-3L RoHS

Manufacturer: Silan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.433 ea
Line Total: USD 2.16

3351 - Global Stock
Ships to you between
Wed. 29 May to Mon. 03 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2842 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 5
Multiples : 5
5 : USD 0.3865
50 : USD 0.3105
150 : USD 0.2724
525 : USD 0.2439
2475 : USD 0.2211
4500 : USD 0.2097

     
Manufacturer
Product Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The SVF7N65CMJ with MOSFET N-Trench technology by Silan is a TO-251J-3L packaged field-effect transistor. This device has a threshold voltage of 4V @ 250uA, a resistance of 1.4O @ 3.5A, 10V and a breakdown voltage of 650V. It can handle a continuous drain current of 7A (Tc). This device meets the RoHS standard and is designed to drive low power circuits. It is suitable for switching applications including PWM, DC-DC converters, and other general-purpose applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Hangzhou Silan Microelectronics

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