Product Information

SVT13N06SA

SVT13N06SA electronic component of Silan

Datasheet
MOSFET N Trench 60V 13A (Tc) 2.5V @ 250uA 11 mΩ @ 13A,10V SOP-8 RoHS

Manufacturer: Silan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2814 ea
Line Total: USD 0.28

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1
1 : USD 0.3319
10 : USD 0.2734
30 : USD 0.2483
100 : USD 0.217
500 : USD 0.2029
1000 : USD 0.1945

     
Manufacturer
Product Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The SVT13N06SA is a MOSFET with N-channel Trench Gate technology characterized by a maximum drain-source voltage of 60V, an on-state resistance of 11mO at 13A, and a drain-source breakdown voltage of 10V. It is designed in a package of SOP-8 with RoHS compliance and manufactured by Silan. Additionally, it features a gate-source threshold voltage of 2.5V with a gate-source leakage current of 250uA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Hangzhou Silan Microelectronics

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