Product Information

SVF8N60F

SVF8N60F electronic component of Silan

MOSFET N Trench 600V 8A 4V @ 250uA 1.2 Ω @ 4A,10V TO-220F (TO-220IS) RoHS

Manufacturer: Silan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6631 ea
Line Total: USD 0.66

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1

Stock Image

SVF8N60F
Silan

1 : USD 0.6631
10 : USD 0.54
30 : USD 0.4874
100 : USD 0.4346
500 : USD 0.3995
1000 : USD 0.3767

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
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The SVF8N60F is an N-channel MOSFET with a trench structure, manufactured by Silan. It is capable of handling up to 600V, up to 8A of current and with a minimum threshold voltage of 4V. It also has a gate-source resistance of 1.2 Ohms at 4A, 10V and leaves a very low 250uA current at its gate. The package size of this MOSFET is a TO-220F (TO-220IS). Lastly, this MOSFET is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Hangzhou Silan Microelectronics

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