SLG59M1658V SLG59M1658V 2 An Ultra-small 1.6 mm , 17 m , 2.5 A, 125C-Rated Internally-protected Integrated Power Switch with Discharge General Description Pin Configuration The SLG59M1658V is a high performance 17 m , 2.5 A single-channel nFET integrated power switch which can operate with a 2.5 V to 5.5 V V supply to switch power rails DD from as low as 0.9 V up to the supply voltage. The 1 8 VDD GND SLG59M1658V incorporates two-level overload current 7 ON 2 protection, thermal shutdown protection, fast output voltage CAP discharge, and in-rush current control which can easily be 6 D 3 S adjusted by a small external capacitor. Using a proprietary MOSFET design, the SLG59M1658V D 4 5 S achieves a stable 17 m RDS across a wide input voltage ON range. In addition, the SLG59M1658Vs package also exhibits 8-pin STDFN low thermal resistance for high-current operation using Silegos proprietary CuFET technology. (Top View) Fully specified over the -40 C to 125 C temperature range, the SLG59M1658V is packaged in a space-efficient, low thermal resistance, RoHS-compliant 1.0 mm x 1.6 mm STDFN Applications package. Notebook Power Rail Switching Features Tablet Power Rail Switching Smartphone Power Rail Switching 1.0 x 1.6 x 0.55 mm STDFN 8L package (2 fused pins for drain and 2 fused pins for source) Logic level ON pin capable of supporting 0.85 V CMOS Logic User selectable ramp rate with external capacitor 17 m RDS while supporting 2.5 A ON Discharges load when off Two Over Current Protection Modes Short Circuit Current Limit Active Current Limit Over Temperature Protection Pb-Free / Halogen-Free / RoHS compliant Operating Temperature: -40 C to 125C Operating Voltage: 2.5 V to 5.5 V Block Diagram 2.5 A 17 m D S C C LOAD IN VDD +2.5 to 5.5 V Charge Pump Linear Ramp Control CAP C SLEW 4 nF Over Current and Over Temperature Protection ON CMOS Input GND Silego Technology, Inc. Rev 1.00 000-0059M1658-100 Revised February 23, 2017 SLG59M1658V Pin Description Pin Pin Name Type Pin Description With an internal 1.8 V UVLO threshold, VDD supplies the power for the 1VDD PWR operation of the power switch and internal control circuitry. Bypass the VDD pin to GND with a 0.1 F (or larger) capacitor. A low-to-high transition on this pin initiates the operation of the < 0.25 V SLG59M1658Vs state machine. ON is a CMOS input with V IL and V > 0.85 V thresholds. While there is an internal pull-down circuit to IH 2 ON Input GND (~4 M), connect this pin directly to a general-purpose output (GPO) of a microcontroller, an application processor, or a system controller. Do not allow this pin to be open-circuited. Drain terminal connection of the n-channel MOSFET (2 pins fused for V ). D 3, 4 D MOSFET Connect at least a low-ESR 0.1 F capacitor from this pin to ground. should be rated at 10 V or higher. Capacitors used at V D Source terminal connection of the n-channel MOSFET (2 pins fused for V ). Connect a low-ESR capacitor from this pin to ground and consult the S 5, 6 S MOSFET Electrical Characteristics table for recommended C range. Capacitors LOAD used at V should be rated at 10 V or higher. S A low-ESR, stable dielectric, ceramic surface-mount capacitor connected from CAP pin to GND sets the V slew rate and overall turn-on time of the S 7 CAP Input SLG59M1658V. For best performance C value should be 1.5 nF SLEW and voltage level should be rated at 10 V or higher. Ground connection. Connect this pin to system analog or power ground 8GND GND plane. Ordering Information Part Number Type Production Flow SLG59M1658V STDFN 8L Extended Industrial, -40 C to 125 C SLG59M1658VTR STDFN 8L (Tape and Reel) Extended Industrial, -40 C to 125 C 000-0059M1658-100 Page 2 of 14