Product Information

SE6020DB

SE6020DB electronic component of SINO-IC

Datasheet
MOSFET N Trench 60V 20A 2.5V @ 250uA 30 mΩ @ 20A,10V TO-252 RoHS

Manufacturer: SINO-IC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2002 ea
Line Total: USD 1

4850 - Global Stock
Ships to you between
Tue. 28 May to Fri. 31 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
2381 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 5
Multiples : 5

Stock Image

SE6020DB
SINO-IC

5 : USD 0.2006
50 : USD 0.1625
150 : USD 0.1462
500 : USD 0.1258
2500 : USD 0.1111
5000 : USD 0.1057

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The SE6020DB is a robust and powerful MOSFET N Trench device manufactured by SINO-IC. This device is designed with optimized power and high-speed switching performance making it suitable for switching applications. It features a maximum drain-source voltage rating of 60V, a maximum drain current capacity of 20A, and a low gate-source voltage threshold of 2.5V at 250uA. The on-resistance of the device is 30 mO and can handle up to 20A of continuous drain current, making it ideal for applications which require low on-resistance and high current handling capacity with 10V breakdown. The device is housed in a TO-252 RoHS package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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