Product Information

SED3022M

SED3022M electronic component of SINO-IC

Datasheet
MOSFET N Trench 30V 20A 2.5V @ 250uA 20 mΩ @ 15A,10V DFN_3x3mm RoHS

Manufacturer: SINO-IC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.1073 ea
Line Total: USD 0.54

10417 - Global Stock
Ships to you between
Mon. 13 May to Thu. 16 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1746 - Global Stock


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 5
Multiples : 5

Stock Image

SED3022M
SINO-IC

5 : USD 0.1661
50 : USD 0.1329
150 : USD 0.1187
500 : USD 0.101
2500 : USD 0.0932
5000 : USD 0.0885

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The SED3022M is a MOSFET N Trench device manufactured by SINO-IC. It is a 30V, 20A power MOSFET device with 2.5V @ 250uA driving voltage and 20 mΩ @ 15A,10V drain to source resistance. This device comes in a DFN-3x3mm package and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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