X-On Electronics has gained recognition as a prominent supplier of MTC3586BDFA6 MOSFETs across the USA, India, Europe, Australia, and various other global locations. MTC3586BDFA6 MOSFETs are a product manufactured by CYSTECH. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

MTC3586BDFA6 CYSTECH

Name: MTC3586BDFA6
Brand: CYSTECH
SKU: MTC3586BDFA6_CYSTECH
Availability: OutOfStock
Rating: 5 (11 reviews)

MTC3586BDFA6 electronic component of CYSTECH

Images are for reference only
See Product Specifications

Part No.	MTC3586BDFA6
Manufacturer:	CYSTECH
Category:	MOSFETs
Description:	MOSFET N & P Trench 20V 5A,3.3A 1.2V @ 250uA 40 mÎ© @ 3.5A,4.5V;105 mÎ© @ 2.5A,4.5V DFN-6L_2x2mm RoHS
Datasheet:	MTC3586BDFA6 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.2924 ea
Line Total: USD 0.29

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

MTC3586BDFA6 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 22 Jul to Fri. 25 Jul MOQ : 1 Multiples : 1	1 : USD 0.2924 10 : USD 0.2379 30 : USD 0.2145 100 : USD 0.1852 500 : USD 0.1721 1000 : USD 0.143

Specifications

Manufacturer CYSTECH CYSTECH
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package DFN - 6L 2X2 mm DFN - 6L 2X2 mm
Brand Category Cystech Cystech
Fet Type n amp; p trench n amp; p trench
Drain To Source Voltagevdss 20 V 20 V
Continuous Drain Current Id @ 25°C 5 A , 3.3 A 5 A , 3.3 A
Vgsth Max @ Id 1.2 V @ 250ua 1.2 V @ 250ua
Rds On Max @ Id Vgs 40 m @ 3.5a,4.5v;105 m @ 2.5a,4.5v 40 m @ 3.5a,4.5v;105 m @ 2.5a,4.5v
Power Dissipation Max 1.38 W 1.38 W
Drain Source Voltage Vdss - -
Continuous Drain Current Id - -
Drain Source On Resistance Rdson@Vgs Id - -
Power Dissipation Pd - -
Gate Threshold Voltage Vgsth@Id - -
Reverse Transfer Capacitance Crss@Vds - -
Type - -
Input Capacitance Ciss@Vds - -
Total Gate Charge Qg@Vgs - -

We are delighted to provide the MTC3586BDFA6 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MTC3586BDFA6 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The MTC3586BDFA6 with MOSFET N&P Trench 20V 5A,3.3A 1.2V @ 250uA 40 mO @ 3.5A,4.5V;105 mO @ 2.5A,4.5V DFN-6L_2x2mm RoHS is a N&P-channel field-effect transistor (MOSFET) produced and manufactured by CYSTECH. It is designed and optimized for low-voltage power-switch and switched-mode applications. The device features a low on-resistance of 40 mO @ 3.5A,4.5V;105 mO @ 2.5A 4.5V and a breakdown voltage of 20V. It is constructed in a small DFN-6L_2x2mm package and rated for RoHS compliance. Features such as fast switching speed, high current drive capability, excellent power dissipation and noise immunity make the MTC3586BDFA6 an ideal choice for power-switch applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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