X-On Electronics has gained recognition as a prominent supplier of S34ML08G301TFI000 NAND Flash across the USA, India, Europe, Australia, and various other global locations. S34ML08G301TFI000 NAND Flash are a product manufactured by SkyHigh Memory. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

S34ML08G301TFI000 SkyHigh Memory

S34ML08G301TFI000 electronic component of SkyHigh Memory
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See Product Specifications
Part No. S34ML08G301TFI000
Manufacturer: SkyHigh Memory
Category: NAND Flash
Description: NAND Flash Nand
Datasheet: S34ML08G301TFI000 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 11.532 ea
Line Total: USD 11.53 
Availability - 47
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
47
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ : 1
Multiples : 1
1 : USD 11.532
10 : USD 9.735
25 : USD 9.537
50 : USD 9.504
96 : USD 8.514
288 : USD 8.261
576 : USD 7.854
1056 : USD 7.744

   
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We are delighted to provide the S34ML08G301TFI000 from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S34ML08G301TFI000 and other electronic components in the NAND Flash category and beyond.

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8 S34ML08G3 8 Gb, 3 V, 2K Page Size, x8 I/O, SLC NAND Flash Memory for Embedded Distinctive Characteristics Density Security 8 Gb (4Gb 2) OTP area Serial number (unique ID) Architecture Hardware program/erase disabled during power transition Architecture (for each 4 Gb device) Volatile and Permanent Block Protection Input / Output Bus Width: 8 bits Electronic Signature Page Size 4 Gb: (2048 + 128) bytes 128-byte spare area Manufacturer ID: 01h Device ID: Follow industry standard for single and stacked Block Size: 64 Pages die implementation 4 Gb: 128 KB + 8 KB Plane Size Operating Temperature 4 Gb: 2048 blocks per plane or (256 MB + 16 MB) Industrial: 40 C to 85 C Device Size Industrial Plus: 40 C to 105 C 4 Gb: Two planes per device or 512 MB Additional Features NAND Flash Interface Multiplane Program and Erase commands Copy Back Program Open NAND Flash Interface (ONFI) 1.0 compliant Multiplane Copy Back Program Address, Data, and Commands multiplexed Reset (FFh) command is required after power-on as a first Supply Voltage command 3.3-V device: V = 2.7 V ~ 3.6 V CC Performance Page Read / Program Package Options Read Page Time (t ): Pb-free and low halogen R 45 s (Typ) / Single Plane 48-Pin TSOP 12 20 1.2 mm 63-Ball BGA 9 11 1 mm) 55 s (Typ) / Multiplane Program time / Multiplane Program time: 350 s (Typ) Block Erase / Multiplane Erase Block Erase time: 4 ms (Typ) Reliability 80,000 Program / Erase cycles (Typ) 10 Year Data retention (Typ) Blocks 0-7 are good at the time of shipment SkyHigh Memory Limited Suite 4401-02, 44/F One Island East, www.skyhighmemory.com Document Number: 002-23046 Rev. *F 18 Westlands Road Hong Kong Revised Nov. 13, 2019S34ML08G3 Contents 1. General Description..................................................... 3 10.2 Absolute Maximum Ratings 9, 11 ........................ 19 10.3 Recommended Operating Conditions .................. 19 2. Connection Diagram.................................................... 3 10.4 AC Test Conditions .............................................. 19 3. Pin Description............................................................. 4 10.5 DC Characteristics ............................................... 20 4. Block Diagrams............................................................ 5 10.6 Pin Capacitance ................................................... 20 5. Addressing ................................................................... 6 11. Package Diagrams...................................................... 21 11.1 48-Pin Thin Small Outline Package (TSOP1) ...... 21 6. Read Status Enhanced................................................ 7 11.2 63-Ball, Ball Grid Array (BGA).............................. 22 7. Read ID.......................................................................... 7 12. Ordering Information.................................................. 23 7.1 Read Parameter Page........................................... 8 13. Document History Page ............................................. 24 8. OTP.............................................................................. 11 8.1 OTP Protection.................................................... 11 9. Security Features....................................................... 12 9.1 Volatile Block Protection (VBP) Overview ........... 12 9.2 Permanent Block Protection (PBP) Overview ..... 16 10. Electrical Characteristics.......................................... 19 10.1 Valid Blocks......................................................... 19 Document Number: 002-23046 Rev. *F Page 2 of 24 Page 2 of 24

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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