X-On Electronics has gained recognition as a prominent supplier of S35ML04G300WHI000 NAND Flash across the USA, India, Europe, Australia, and various other global locations. S35ML04G300WHI000 NAND Flash are a product manufactured by SkyHigh Memory. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

S35ML04G300WHI000 SkyHigh Memory

S35ML04G300WHI000 electronic component of SkyHigh Memory
S35ML04G300WHI000 SkyHigh Memory
S35ML04G300WHI000 NAND Flash
S35ML04G300WHI000  Semiconductors

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See Product Specifications
Part No. S35ML04G300WHI000
Manufacturer: SkyHigh Memory
Category: NAND Flash
Description: NAND Flash SLC,4Gb,16nm,3.3V,x1, X2, X4,0bit,LGA8
Datasheet: S35ML04G300WHI000 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 6.6125 ea
Line Total: USD 6.61 
Availability - 583
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
583
Ship by Fri. 13 Jun to Tue. 17 Jun
MOQ : 1
Multiples : 1
1 : USD 6.6125
10 : USD 5.368
25 : USD 5.269
50 : USD 5.225
100 : USD 4.763
250 : USD 4.752
338 : USD 4.499
1014 : USD 4.378
2704 : USD 4.334

   
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Memory Size
Interface Type
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Supply Voltage - Min
Supply Voltage - Max
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We are delighted to provide the S35ML04G300WHI000 from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S35ML04G300WHI000 and other electronic components in the NAND Flash category and beyond.

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S35ML01G3 S35ML02G3 S35ML04G3 1Gb/2Gb/4Gb, 3V, SPI SLC NAND Flash Memory for Embedded Distinctive Characteristics Density NAND Flash interface 1Gb / 2Gb / 4G b Supports Serial Peripheral Interface (SPI) Architecture Supply Voltage Page size: 3.3-V device: V = 2.7 V ~ 3.6 V CC 1 Gb : (20 48 + 64) bytes 64-byte spare area 1 Gb : (2048 + 128) bytes 128-byte spare area Security 2 Gb /4 Gb: (2048 + 128) bytes 128-byte spare area One Time Programmable (OTP) area Block size: 64 Pages Serial number (unique ID) (Contact factory for support) 1 Gb : 128 KB + 4 KB Hardware program/erase disabled during power transition 1 Gb : 128 KB + 8 KB Volatile and Permanent Block Protection 2 Gb / 4 Gb: 128 KB + 8 KB Plane size Additiona l feature s 1 Gb: 1024 blocks per plane or (128 MB + 4 MB) On- chip ECC correctio n Program an d Eras e 1 Gb: 1024 blocks per plane or (128 MB + 8 MB) Supports single I/O, Dual I/O, Quad I/O 2 Gb: 1024 blocks per plane or (128 MB + 8 MB) Support Frequency up to 104MHZ 4 Gb: 2048 blocks per plane or (256 MB + 16 MB) Supports Clock Polarity and phase modes 0 and 3 Device Size Electronic signatur e 1 Gb: 1 plane per device or 128 Mbyte 2 Gb: 2 planes per device or 256 Mbyte Manufacturer ID: 01h 4 Gb: 2 planes per device or 512 Mbyte Operating temperature Performance Industrial: 40 C to 85 C Page Read / Program Industrial Plus: 40 C to 105 C Read Page Time (tR): 45 s (Typ) Package options Program time: 350 s (Typ) Pb-free and low halogen Block Erase 8-Pin LGA 6 8 m m Block Erase time: 4.0 m s (Typ ) 16-Pin SOIC 300 mi ls Reliability 24-Ball FBGA 8 6 mm 80,000 Program / Erase cycles (Typ) 10 Year Data Retention (Typ) Blocks 0-7 are good at the time of shipment SkyHigh Memory Limited Suite 4401-02, 44/F One Island East, www.skyhighmemory.com Document Number: 002-19205 Rev. H 18 Westlands Road Hong Kong ReReRevised Sept. 14 vised Mvised Nov. 16 2021ay 28 20202211 S35ML01G3 S35ML02G3 S35ML04G3 Contents 1. General Description ...................................................... 3 6. Timing Diagrams ......................................................... 36 1.1 Logic Diagram ................................................................. 4 6.1 SPI Clock Timing.......................................................... 36 1.2 Connection Diagram ........................................................ 5 6.2 Serial Input Timing..........................................................36 6.3 Serial Output Timing.................................................... 36 1.3 Pin Description ................................................................ 6 1.4 Block Diagram ................................................................. 6 6.4 WP Timing................................................................. 37 1.5 Array Organization .......................................................... 7 6.5 HOLD Timing............................................................. 37 1.6 Memory Ad dre................................ssing .................................... 9 6.6 Block Erase/Program Execute/ Page read Timing ......... 38 2. Bus Operation .............................................................10 6.7 Read Buffer 1X (03h or 0Bh Timing ...) .......................................... 38 2.1 SPI Modes...................................................................10 6.8 Fast Read Dual Output Buffer 2X (3Bh) Timing............. 39 2.2 SPI Protocol................................................................. 10 6.9 Fast Read Quad Output Buffer 2X (6Bh) Timing........... 39 3. Command Set ..............................................................11 6.10 Program Load 1X (02h) and Program Load Random 3.1 Power up and Reset Commands .................................... 13 Data 1X (84h) buffer Timing........................................... 4 0 3.2 Write Enable and Write Disable Commands................... 13 6.11 Quad Program Data Load 4X (32h) and Quad Program 3.3 Hardware Write Protection............................................. 41 13 Load Random Data 1X (34h) buffer Timing.................... 3.4 Read Operation.............................................................. 13 6.12 ...................... 41 Small Data Input. Guidelines.................... 3.5 Page Program Operation...............................................13 6.13 Fast Read Dual IO 2X(BBh)-Timing............................. 42 3.6 Feature Operations ........................................................... 14 6.14 Fast Read Quad I/O 4X (EBh) Timing......................... 43 3.6.1 Set Feature ................................................................... 14 6.15 Power-up Timing.......................................................... 44 3.6. 2 Get Feature.................................................................... 14 7. Physical Interface ........................................................ 45 3.7 Feature Registers......................................................... 15 7.1 Physical Diagrams .......................................................... 45 3.8 Read ID........................................................................18 Error Management ....................................................... 48 8. 3.9 Read Unique ID.............................................................. 18 System Bad Block Replacement ................................... 48 8.1 3.10 One Time Programming OTP.......................................18 Bad Block Management ................................................ 49 8.2 3.10.1Read OTP 18 .................................................................... Ordering Information ........................................................ 50 18 9. 3.10.2Program OTP ................................................................ Document History ....................................................... 51 10. 3.10. 3OTP Program Prevention........................................... 19 3.11 Internal Data Move......................................................... 19 3.12 Read Parameter Page.............................................................20 (84h ) Buff er Timi ng Diagr am 4. Electrical Characteristics ..........................................23 4.1 Valid Blocks ................................................................. 23 4.2 Absolute Maximum Ratings ...........................................23 4.3 Recommended Operating Conditions............................23 4.4 AC Test Conditions........................................................ 23 4.5 AC Characteristics ......................................................... 24 4.6 DC Characteristics ........................................................ 26 4.7 Pin Capacitance ........................................................... 27 4.8 Program / Erase Characteristics.................................... 27 5. Security Features ........................................................28 5.1 27 Volatile Block Protection Overview ................................ 5.2 Permanent Block Protection Overview ...........................................33 5.3 Permanent Block Protection Lock-Down Sequence ............................35 5.4 Block Protection Status Command............................... 35 5.5 Block Lock Status Register ......................................................... 35 Document Number: 002-19205 Rev. H Page 2 of 51

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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