Product Information

1N5711

1N5711 electronic component of STMicroelectronics

Datasheet
1N5711 SCHOTTKY DIODE AXIAL
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5022 ea
Line Total: USD 0.5

0 - Global Stock
Ships to you by
Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you by Mon. 06 May

MOQ : 1
Multiples : 1

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1N5711
STMicroelectronics

1 : USD 0.5022
10 : USD 0.2511
50 : USD 0.226
250 : USD 0.1884
500 : USD 0.1695

Read More Specifications

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
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Additional Infomation About Product

1N5711 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break- down, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detec- tion and pulse application with broad dynamic range. Matched batches are available on request DO-35 ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V Repetitive Peak Reverse Voltage 70 V RRM I Forward Continuous Current* T = 25C 15 mA F a P Power Dissipation* T = 25C 430 mW tot a T Storage and Junction Temperature Range - 65 to 200 C stg T - 65 to 200 j T Maximum Lead Temperature for Soldering during 10s at 4mm 230 C L from Case THERMAL RESISTANCE Symbol Test Conditions Value Unit R Junction-ambient* 400 C/W th(j-a) ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit V 70 V BR T = 25C I = 10A amb R V * * 0.41 V F T = 25CI = 1mA amb F 1 T = 25CI = 15mA amb F I * * T = 25CV = 50V 0.2 A R amb R DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit CT = 25C V = 0V f = 1MHz 2 pF amb R 100 ps T = 25CI = 5mA Krakauer Method amb F * On infinite heatsink with 4mm lead length ** Pulse test: t 300s < 2%. p Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification. October 2001 - Ed: 1B 1/31N5711 Fig. 1: Forward current versus forward voltage at Fig. 2: Capacitance C versus reverse applied low level (typical values). voltage V (typical values). R Fig. 3: Reverse current versus ambient tempera- Fig. 4: Reverse current versus continuous reverse ture. voltage (typical values). 2/3

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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