1N5711 STMicroelectronics

1N5711 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break- down, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detec- tion and pulse application with broad dynamic range. Matched batches are available on request DO-35 ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V Repetitive Peak Reverse Voltage 70 V RRM I Forward Continuous Current* T = 25C 15 mA F a P Power Dissipation* T = 25C 430 mW tot a T Storage and Junction Temperature Range - 65 to 200 C stg T - 65 to 200 j T Maximum Lead Temperature for Soldering during 10s at 4mm 230 C L from Case THERMAL RESISTANCE Symbol Test Conditions Value Unit R Junction-ambient* 400 C/W th(j-a) ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit V 70 V BR T = 25C I = 10A amb R V * * 0.41 V F T = 25CI = 1mA amb F 1 T = 25CI = 15mA amb F I * * T = 25CV = 50V 0.2 A R amb R DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit CT = 25C V = 0V f = 1MHz 2 pF amb R 100 ps T = 25CI = 5mA Krakauer Method amb F * On infinite heatsink with 4mm lead length ** Pulse test: t 300s < 2%. p Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification. October 2001 - Ed: 1B 1/31N5711 Fig. 1: Forward current versus forward voltage at Fig. 2: Capacitance C versus reverse applied low level (typical values). voltage V (typical values). R Fig. 3: Reverse current versus ambient tempera- Fig. 4: Reverse current versus continuous reverse ture. voltage (typical values). 2/3