1N5822/LOOSE STMicroelectronics

1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS I 3A F(AV) V 40 V RRM T 150C j V (max) 0.475 V F FEATURES AND BENEFITS n VERY SMALL CONDUCTION LOSSES n NEGLIGIBLE SWITCHING LOSSES n EXTREMELY FAST SWITCHING n LOW FORWARD VOLTAGE DROP n AVALANCHE CAPABILITY SPECIFIED DO-201AD DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO-201AD these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. ABSOLUTE RATINGS (limiting values) Value Symbol Parameter Unit 1N5820 1N5821 1N5822 20 30 40 V V RRM Repetitive peak reverse voltage I 10 A F(RMS) RMS forward current I 3A F(AV) Average forward current T = 100C = 0.5 L 33 A T = 110C = 0.5 L I 80 A FSM Surge non repetitive forward tp=10ms current Sinusoidal P 1700 W ARM Repetitive peak avalanche tp = 1s Tj = 25C power T - 65 to + 150 C stg Storage temperature range Tj 150 C Maximum operating junction temperature * dV/dt 10000 V/s Critical rate of rise of reverse voltage dPtot 1 *: < thermal runaway condition for a diode on its own heatsink dTj Rth()j - a July 2003 - Ed: 3A 1/51N582x THERMAL RESISTANCES Symbol Parameter Value Unit R Lead length = 10 mm 80 C/W th (j-a) Junction to ambient R Lead length = 10 mm 25 C/W th (j-l) Junction to lead STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests Conditions 1N5820 1N5821 1N5822 Unit I * 222 mA R Reverse leakage Tj=25CV =V R RRM current 20 20 20 mA Tj = 100C V * 0.475 0.5 0.525 V F Forward voltage drop Tj = 25CI =3A F 0.85 0.9 0.95 V Tj=25CI = 9.4 A F Pulse test : * tp = 380 s, <2% To evaluate the conduction losses use the following equations : 2 P=0.33xI + 0.035 I for 1N5820 / 1N5821 F(AV) F (RMS ) 2 P=0.33xI + 0.060 I for 1N5822 F(AV) F (RMS ) Fig. 1: Average forward power dissipation versus Fig. 2: Average forward power dissipation versus average forward current (1N5820/1N5821). average forward current (1N5822). PF(av)(W) PF(av)(W) 1.8 2.0 = 0.1 = 0.2 = 0.2 = 0.5 = 0.1 = 0.5 1.8 1.6 = 0.05 1.6 = 0.05 1.4 = 1 1.4 1.2 = 1 1.2 1.0 1.0 0.8 0.8 0.6 0.6 T T 0.4 0.4 0.2 0.2 =tp/T tp =tp/T tp IF(av) (A) IF(av) (A) 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Fig. 3: Normalized avalanche power derating Fig. 4: Normalized avalanche power derating versus pulse duration. versus junction temperature. P(ARMtp) P(t) ARM p P (1s) ARM P (25C) ARM 1 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 T (C) j tp(s) 0.001 0 0 25 50 75 100 125 150 0.01 0.1 1 10 100 1000 2/5