BAT30F4 STMicroelectronics

BAT30F4 Datasheet 30 V signal Schottky diode A K Features Very low conduction losses Negligible switching losses 0201 small package Low capacitance diode ECOPACK2 and RoHS compliant Applications 0201 A A Reverse polarity protection Fingerprint module Camera module Bluetooth wireless earbud Biometric computer card 4 Description B B Top Bottom Marking The BAT30F4 uses 30 V Schottky barrier diodes in a 0201 package. This device is intended to be used in smartphones, and is especially suited for rail to rail protection where its low forward voltage drop will help designers to get an efficient protection of their ICs. Product status link BAT30F4 Product summary I 300 mA F V 30 V RRM V (typ.) 0.55 V F T (max.) operating 105 C j DS10126 - Rev 8 - September 2021 www.st.com For further information contact your local STMicroelectronics sales office.BAT30F4 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values, at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 30 V RRM I Continuous forward current 300 mA F I t = 10 ms sinusoidal Surge non repetitive forward current 4 A FSM p (1) P Power dissipation 200 mW D T Storage temperature range -55 to + 150 C stg T Operating junction temperature range -40 to +105 C OP T Maximum junction temperature in DC forward mode 150 C j T Maximum soldering temperature during 10 s 260 C L 1. On epoxy printed circuit board with minimum recommended footprint Table 2. Thermal resistance parameter Symbol Parameter Value (Typ.) Unit (1) R 450 C/W th(j-a) Junction to ambient 1. On epoxy printed circuit board with minimum recommended footprint Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 2.2 6.0 j V = 10 V R T = 85 C - 300 j (1) I Reverse leakage current A R T = 25 C - 18 j V = 30 V R T = 85 C - 1600 j T = 25 C - 0.285 j I = 5 mA F T = 85 C - 0.205 j T = 25 C - 0.27 0.31 j I = 10 mA F T = 85 C - 0.24 j (2) V Forward voltage drop V F T = 25 C - 0.39 0.44 j I = 100 mA F T = 85 C - 0.40 j T = 25 C - 0.55 0.625 j I = 300 mA F T = 85 C - 0.64 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p DS10126 - Rev 8 page 2/11