BAT46 STMicroelectronics

BAT46 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION DO-35 General purpose, metalto silicon diode featuring high breakdown voltage low turn-on voltage. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V Repetitive Peak Reverse Voltage 100 V RRM I Forward Continuous Current* T = 25C 150 mA F a t 1s p I Repetitive Peak Forward Current* 350 mA FRM 0.5 I Surge non Repetitive Forward Current* t = 10ms 750 mA FSM p P Power Dissipation* T = 80C 150 mW tot I T Storage and Junction Temperature Range - 65 to + 150 stg C T - 65 to + 125 j Maximum Temperature for Soldering during 10s at 4mm from T 230 C L Case THERMAL RESISTANCE Symbol Test Conditions Value Unit R Junction-ambient* 300 C/W th(j-a) * On infinite heatsink with 4mm lead length. October 2001 - Ed: 2B 1/4BAT46 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit V T = 25C BR j 100 V I = 100A R V*T = 25C 0.25 V F j I = 0.1mA F T = 25C 0.45 j I = 10mA F T = 25C 1 j I = 250mA F I * T = 25C 0.5 R j A V = 1.5V R T = 60C 5 j T = 25C 0.8 j V = 10V R T = 60C 7.5 j T = 25C V = 50V 2 j R T = 60C 15 j T = 25C V = 75V 5 j R T = 60C 20 j DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit T = 25C V = 0V 10 pF j R f = 1Mhz C T = 25C V = 1V 6 j R * Pulse test: t 300s < 2%. p 2/4