BTW69-800 Datasheet 50 A 800 V SCR in TOP3 insulated Features A Max. repetitive blocking voltage = V , V = 800 V DRM RRM G I maximum = 80 mA GT K ECOPACK 2 component (RoHS and HF compliance) Complies with UL 1557 standard (File ref : E81734) Applications Solid state relays K Welding equipment A G High power motor control TOP3 Isolated Heating systems Controlled AC/DC bridge Description Available in a high power package TOP3-I, the BTW69-800 is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, high power motor control and power converters. This device offers a superior performance in surge current handling capabilities, allowing usage in industrial environment. Thanks to its internal ceramic pad, it provide high voltage insulation (2500V ), RMS Product status link complying with UL standards (file ref: E81734). BTW69-800 Product summary I 50 A T(RMS) V /V 800 V DRM RRM I 80 mA GT DS13093 - Rev 1 - September 2019 www.st.com For further information contact your local STMicroelectronics sales office.BTW69-800 Characteristics 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameters Value Unit I T = 75 C RMS on-state current (180 conduction angle) 50 A T(RMS) c Average on-state current IT T = 75 C 32 A (AV) c (180 conduction angle) t = 8.3 ms 610 p I Non repetitive surge peak on-state current (full cycle, T initial = 25 C, V = 0 V) A TSM j R t = 10 ms 580 p 2 2 2 t = 10 ms, T = 25C I t I t value for fusing 1680 A s p j Critical rate of rise of on-state current T = 125 C dl/dt F = 60 Hz 50 A/s j I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125 C 8 A GM p j P T = 125 C Average gate power dissipation 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j V Maximum peak reverse gate voltage 5 V GRM V Insulation RMS voltage, 1 minute 2500 V ins Table 2. Electrical characteristics (T = 25C, unless otherwise specified) j Symbol Test conditions T Value Unit j Min. 8 I mA GT V = 12 V, R = 33 Max 80 D L V Max 1.3 V GT V V = V , R = 3.3 k 125 C Min. 0.2 V GD D DRM L I I = 500 mA, gate open Max. 150 mA H T I I = 1.2 x I Max. 200 mA L G GT V = 67 %, V gate open dV/dt 125 C Min. 1000 V/s D DRM V I = 100 A, t = 380 s Max. 1.9 V TM TM p V Threshold on-state voltage 125 C Max. 1.0 V TO R On-state dynamic resistance 125 C Max. 8.5 m D 25 C 10 A I /I V = V , V = V Max. DRM RRM D DRM R RRM 125 C 5 mA DS13093 - Rev 1 page 2/9