BTW69-800RG STMicroelectronics

BTW69-800RG electronic component of STMicroelectronics
BTW69-800RG STMicroelectronics
BTW69-800RG SCRs
BTW69-800RG  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BTW69-800RG SCRs across the USA, India, Europe, Australia, and various other global locations. BTW69-800RG SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

Part No. BTW69-800RG
Manufacturer: STMicroelectronics
Category: SCRs
Description: Thyristor; 800V; 32A; 50A; 80mA; Package: tube; THT; TOP3
Datasheet: BTW69-800RG Datasheet (PDF)
Price (USD)
600: USD 5.2475 ea
Line Total: USD 3148.5 
Availability : 1746
  
Ship by Mon. 11 Aug to Fri. 15 Aug
QtyUnit Price
600$ 5.2475

Availability 8
Ship by Thu. 07 Aug to Mon. 11 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 10.612
2$ 9.492
6$ 8.974


Availability 597
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 35
Multiples : 1
QtyUnit Price
35$ 7.4799
39$ 6.7562
42$ 6.2361


Availability 2328
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 42
Multiples : 1
QtyUnit Price
42$ 9.3925
100$ 8.5781
500$ 8.125
1000$ 7.6719


Availability 582
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 42
Multiples : 1
QtyUnit Price
42$ 9.3925
100$ 8.5781
500$ 8.125


Availability 1746
Ship by Mon. 11 Aug to Fri. 15 Aug
MOQ : 600
Multiples : 600
QtyUnit Price
600$ 5.2475

   
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Package / Case
Packaging
Series
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Hts Code
LoadingGif
 
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We are delighted to provide the BTW69-800RG from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BTW69-800RG and other electronic components in the SCRs category and beyond.

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BTW69-800 Datasheet 50 A 800 V SCR in TOP3 insulated Features A Max. repetitive blocking voltage = V , V = 800 V DRM RRM G I maximum = 80 mA GT K ECOPACK 2 component (RoHS and HF compliance) Complies with UL 1557 standard (File ref : E81734) Applications Solid state relays K Welding equipment A G High power motor control TOP3 Isolated Heating systems Controlled AC/DC bridge Description Available in a high power package TOP3-I, the BTW69-800 is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, high power motor control and power converters. This device offers a superior performance in surge current handling capabilities, allowing usage in industrial environment. Thanks to its internal ceramic pad, it provide high voltage insulation (2500V ), RMS Product status link complying with UL standards (file ref: E81734). BTW69-800 Product summary I 50 A T(RMS) V /V 800 V DRM RRM I 80 mA GT DS13093 - Rev 1 - September 2019 www.st.com For further information contact your local STMicroelectronics sales office.BTW69-800 Characteristics 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameters Value Unit I T = 75 C RMS on-state current (180 conduction angle) 50 A T(RMS) c Average on-state current IT T = 75 C 32 A (AV) c (180 conduction angle) t = 8.3 ms 610 p I Non repetitive surge peak on-state current (full cycle, T initial = 25 C, V = 0 V) A TSM j R t = 10 ms 580 p 2 2 2 t = 10 ms, T = 25C I t I t value for fusing 1680 A s p j Critical rate of rise of on-state current T = 125 C dl/dt F = 60 Hz 50 A/s j I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125 C 8 A GM p j P T = 125 C Average gate power dissipation 1 W G(AV) j T Storage junction temperature range -40 to +150 C stg T Operating junction temperature range -40 to +125 C j V Maximum peak reverse gate voltage 5 V GRM V Insulation RMS voltage, 1 minute 2500 V ins Table 2. Electrical characteristics (T = 25C, unless otherwise specified) j Symbol Test conditions T Value Unit j Min. 8 I mA GT V = 12 V, R = 33 Max 80 D L V Max 1.3 V GT V V = V , R = 3.3 k 125 C Min. 0.2 V GD D DRM L I I = 500 mA, gate open Max. 150 mA H T I I = 1.2 x I Max. 200 mA L G GT V = 67 %, V gate open dV/dt 125 C Min. 1000 V/s D DRM V I = 100 A, t = 380 s Max. 1.9 V TM TM p V Threshold on-state voltage 125 C Max. 1.0 V TO R On-state dynamic resistance 125 C Max. 8.5 m D 25 C 10 A I /I V = V , V = V Max. DRM RRM D DRM R RRM 125 C 5 mA DS13093 - Rev 1 page 2/9

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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