CBTVS2A12-1F3 STMicroelectronics

CBTVS2A12-1F3 electronic component of STMicroelectronics
CBTVS2A12-1F3 STMicroelectronics
CBTVS2A12-1F3 ESD Protection Diodes / TVS Diodes
CBTVS2A12-1F3  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of CBTVS2A12-1F3 ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. CBTVS2A12-1F3 ESD Protection Diodes / TVS Diodes are a product manufactured by STMicroelectronics. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No. CBTVS2A12-1F3
Manufacturer: STMicroelectronics
Category: ESD Protection Diodes / TVS Diodes
Description: ESD Suppressors / TVS Diodes DFD PROTECTION & FILTER
Datasheet: CBTVS2A12-1F3 Datasheet (PDF)
Price (USD)
1: USD 0.3275 ea
Line Total: USD 0.33 
Availability : 7041
  
Ship by Mon. 10 Nov to Wed. 12 Nov
QtyUnit Price
1$ 0.3275
10$ 0.12
10000$ 0.1034
20000$ 0.1012

Availability 4881
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 2359
Multiples : 1
QtyUnit Price
2359$ 0.1102


Availability 7041
Ship by Mon. 10 Nov to Wed. 12 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3275
10$ 0.12
10000$ 0.1034
20000$ 0.1012


Availability 4881
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 2359
Multiples : 1
QtyUnit Price
2359$ 0.1102


Availability 97
Ship by Wed. 12 Nov to Tue. 18 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 1.0152
10$ 0.9102
30$ 0.6453
100$ 0.5454
500$ 0.5249
1000$ 0.5135

   
Manufacturer
Product Category
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Clamping Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Taric
Vf - Forward Voltage
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CBTVS2A12-1F3 from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CBTVS2A12-1F3 and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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CBTVS2A12-1F3 Circuit breaker with transient voltage suppressor Datasheet - production data Features Transient voltage suppressor (TVS) Non-resettable over current protection (OCP) Electrostatic discharge protection Electrical overstress protection (OVP) Unidirectional device Fast response time Flip Chip Very thin package: 0.4 mm (4 bumps) High ESD protection level High integration Suitable for high density boards Figure 1. Pin configuration (bump side) Complies with the following standards: A B IEC 61000-4-2 level 4: 15 kV (air discharge) 1 15 kV (contact discharge) 2 Description The CBTVS2A12-1F3 is a single line diode TVS integrating a fuse designed specifically for the (a) Figure 2. Configuration protection of integrated circuits in portable equipment and miniaturized electronics devices W H , & 7 subject to ESD, OVP and OCP. I X VH 1RQ UHVHWWD H O E *1 *1 a. B1 and B2 bumps must be grounded on the PCB together. May 2014 DocID026350 Rev 1 1/7 This is information on a product in full production. www.st.com % % 0DQDJHR 3RZ PHQW U &KDLQSX UJHU Characteristics CBTVS2A12-1F3 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Test condition Value Unit IEC 61000-4-2 contact discharge 15 V Peak pulse voltage kV PP IEC 61000-4-2 air discharge 15 10/1000 s pulse, on A2-B2, 44 T = T j amb Peak pulse power P W PP dissipation 8/20 s pulse, on A2-B2, 350 T = T j amb T Maximum operating junction temperature 125 C j T Storage temperature range -55 to +150 C stg Figure 3. Electrical characteristics (definitions) I Symbol Parameter I F V = Breakdown voltage BR V = Clamping voltage CL I = Leakage current V RM RM V = Stand-off voltage VF RM V V V CL BR RM V I = Forward current F I RM R = Dynamic impedance d I = Peak pulse current PP I = Breakdown current R Slope = 1/Rd V = Forward voltage drop F IPP Table 2. Electrical characteristics (at operating temperature: T = -30 C to +85 C, unless otherwise specified) op Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA, T = 25 C 12 V BR R amb I V = 10 V, at T = 25 C 100 nA RM RM amb I = 1 A, 8/20 s pulse waveform, between A1-B1 PP V 15 V CL at T = 25 C amb V I = 850 mA, between A1-B1 1.4 V F F C V = 0 V, V = 30 mV, F = 1 MHz 180 pF line R OSC R At T = 25 C at 100 mA 50 m A1-A2 amb R After fused 1 M A1-A2 T At 5 A (maximum opening time) A -A A -A 100 ms Fuse 1 2, 2 1 T At 3.2 A, A -A A -A 24 hours Fuse2 1 2, 2 1 T I = 2 A (continuous current) at T = 25 C 500 hours fuse Lifetime DC amb 2/7 DocID026350 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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