EMIF06-1005N12 STMicroelectronics

EMIF06-1005N12 6-line IPAD, low capacitance EMI filter and ESD protection in narrow micro QFN package Features EMI symmetrical (I/O) low-pass filter 12 High efficiency in EMI filtering at frequencies from 900 MHz to 1.8 GHz 1 Very low PCB space consumption: 2.5 mm x 1.2 mm QFN-12L Very thin package: 0.55 mm max Figure 1. Pin configuration (top view) High efficiency in ESD suppression on inputs pins (IEC 61000-4-2 level 4) 1 Input Output 12 High reliability offered by monolithic integration 2 Input Output 11 High reduction of parasitic elements through integration and wafer level packaging 3 Input Output 10 Lead-free package Complies with the following standards 4 Input Output 9 IEC 61000-4-2 level 4 input and output pins 5 Input + 15 kV (air discharge) Output 8 + 8 kV (contact discharge) 6 Input MIL STD 883G - Method 3015-7 Class 3B Output 7 (all pins) Applications Figure 2. Basic cell configuration 100 Where EMI filtering in ESD sensitive equipment is Input Output required: LCD and camera for mobile phones Computers and printers Communication systems Typical line capacitance = 45 pF 0 V MCU boards Keypad for portable equipment Description EMIF06-1005N12 is a 6-line, highly integrated device designed to suppress EMI/RFI noise in all systems exposed to electromagnetic interference.This filter includes ESD protection circuitry, which prevents damage to the application when subjected to ESD surges up to TM: IPAD is a trademark of STMicroelectronics. 15 kV on the input pins. July 2011 Doc ID 16959 Rev 2 1/12 www.st.com 12Characteristics EMIF06-1005N12 1 Characteristics Table 1. Absolute ratings (limiting values) Symbol Parameter and test conditions Value Unit ESD discharge IEC 61000-4-2, level 4 air discharge 15 contact discharge 15 ESD-Machine Model : 2 V kV PP (MM: C = 200 pF, R = 25 L = 500 nH) ESD-Charged Device Model: 1 (JESD22-C101D) T Junction temperature at T = 25 C 125 C j amb T Operating temperature range - 40 to + 85 C op T Storage temperature range - 55 to + 150 C stg Figure 3. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage BR V = Clamping voltage I CL F I = Leakage current V RM RM V = Stand-off voltage RM I = Forward current F VF I = Peak pulse current V V V PP CL BR RM V IRM I = Breakdown current R I R V = Forward voltage drop F R = Dynamic impedance d I = Forward current PP IPP R = Series resistanc between input and output I/O C = Input capacitance per line line Table 2. Electrical characteristics (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6 8 10 V BR R V I = 10 mA 0.5 1 1.5 V F F I V = 3 V per line 200 nA RM RM R Tolerance 15% 85 100 115 I/O C V = 0 V, V = 30 mV, F = 1 MHz 38 45 52 pF line line osc 2/12 Doc ID 16959 Rev 2