ESDZX051-1BF4 Datasheet 10 V ultra-low clamping single line high speed bidirectional ESD protection Features Ultra-low clamping voltage: 10 V TLP at 16 A I pp Bidirectional protection diode Very high bandwidth: 24 GHz Very low dynamic resistance: 0.5 Suitable for RF antenna application with very low harmonic: H3 < -50 dBm at 20 dBm power: 710 MHz, 824 MHz and 2.4 GHz 0201 package ST0201 package ECOPACK2 compliant component Exceeds IEC 61000-4-2 level 4: 12 kV (contact discharge) 20 kV (air discharge) Application Where transient over voltage protection in ESD sensitive equipment is required, such as: USB 3.2 Gen 1 and Gen 2 RF antenna Ethernet 1000 BASE-T Ethernet 10G BASE-T Product status link Display port ESDZX051-1BF4 LVDS Description The ESDZX051-1BF4 is a bidirectional single line TVS diode designed to protect the data lines or other I/O ESD transients. Thanks to extra low capacitance, ESDZX051-1BF4 can protect high speed differential lines with no impact on signal integrity. With an extremely low clamping voltage, ESDZX051-1BF4 is able to protect the most sensitive, submicron technology circuits. DS13207 - Rev 2 - March 2020 www.st.com For further information contact your local STMicroelectronics sales office.ESDZX051-1BF4 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge 12 V pp Peak pulse voltage kV IEC 61000-4-2 air discharge 20 P Peak pulse power (8/20 s) 20 W pp I Peak pulse current (8/20 s) 4 A pp T Operating junction temperature range -55 to 150 j T Storage junction temperature range -65 to 150 C stg T Maximum lead temperature for soldering during 10 s 260 L Figure 1. Electrical characteristics (definitions) Table 2. Electrical characteristics (values) (T = 25 C) amb Symbol Parameter Test condition Min. Typ. Max. Unit V Maximum off-state voltage 9.6 10.5 V TRIG V Lower voltage than V guarantees the protection turn-off 1.4 1.7 V H H I Minimum on-state current 35 mA HOLD V Reverse working voltage 3.6 V RM I V = 3.6 V Leakage current 100 nA RM RM I = 4 A - 8/20s 4 5 V pp 8 kV contact discharge after 30 ns, IEC 61000-4-2 11 V V Clamping voltage CL I = 16 A 10 PP TLP measurement (pulse duration 100 ns) V I = 4 A 4 PP R Dynamic resistance, TLP pulse duration 100 ns (from 4 A to 16 A I ) 0.5 D pp f Cut-off frequency -3dB 24 GHz C V = 0 V, F = 3 GHz 0.28 0.35 LINE C Line capacitance pF LINE V = 0 V, F = 10 GHz 0.25 0.33 LINE DS13207 - Rev 2 page 2/12