L6387E High voltage high and low-side driver Datasheet - production data Description The L6387E is a simple and compact high voltage gate driver, manufactured with the BCD offline technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can DIP-8 SO-8 independently sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function. Features The L6387E device provides two input pins and High voltage rail up to 600 V two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are dV/dt immunity 50 V/nsec in full temperature CMOS/TTL compatible to ease the interfacing range with controlling devices. Driver current capability The L6387E features the UVLO protection on the 400 mA source V supply voltage and integrates the bootstrap CC 650 mA sink diode, allowing a more compact and reliable Switching times 50/30 nsec rise/fall with 1 nF solution. load The device is available in a DIP-8 tube and SO-8 CMOS/TTL Schmitt trigger inputs with tube and tape and reel packaging options. hysteresis and pull-down Internal bootstrap diode Outputs in phase with inputs Interlocking function Applications Home appliances Motor drivers DC, AC, PMDC and PMAC motors Lighting applications Industrial applications and drives Induction heating HVAC Factory automation Power supply systems October 2015 DocID13990 Rev 4 1/17 This is information on a product in full production. www.st.comContents L6387E Contents 1 Block diagram 3 2 Electrical data 4 2.1 Absolute maximum ratings . 4 2.2 Thermal data . 4 2.3 Recommended operating conditions . 4 3 Pin connection 5 4 Electrical characteristics . 6 4.1 AC operation . 6 4.2 DC operation . 6 5 Input logic . 8 6 Bootstrap driver 9 C selection and charging 9 BOOT 7 Typical characteristic . 11 8 Package information 12 8.1 DIP-8 package information 12 8.2 SO-8 package information 14 9 Order codes . 16 10 Revision history . 16 2/17 DocID13990 Rev 4