Product Information

LET9150

Name: LET9150
Brand: STMicroelectronics
SKU: LET9150_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

LET9150 electronic component of STMicroelectronics

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Datasheet

Transistors RF MOSFET RF Power LdmoST 150W 20 dB 860MHz

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 - WHS 1 MOQ : 1 Multiples : 1 LET9150 STMicroelectronics	1 : USD 350.2464	N/A Obsolete

0 - WHS 2 MOQ : 60 Multiples : 60 LET9150 STMicroelectronics	60 : USD 195.9487 120 : USD 195.9487 300 : USD 192.934 540 : USD 188.4121	N/A Obsolete

0 - WHS 3 MOQ : 1 Multiples : 1 LET9150 STMicroelectronics	1 : USD 252.6939	N/A Obsolete

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Additional Infomation About Product

LET9150 RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration push-pull P = 150 W with 20 dB gain 860 MHz OUT BeO-free package Description The LET9150 is a common source n-channel enhancement-mode lateral field-effect RF power M246 transistor designed for broadband commercial Epoxy sealed and industrial applications at frequencies up to 2 GHz. Figure 1. Pin connection 12 5 4 1-2 Drain 3 Source 4-5 Gate Table 1. Device summary Order code Package Branding LET9150 M246 LET9150 December 2010 Doc ID 16369 Rev 6 1/12 www.st.com 12Contents LET9150 Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 3 Impedance data . 5 4 Typical performances 6 5 Test circuit . 7 6 Package mechanical data . 9 7 Revision history . 11 2/12 Doc ID 16369 Rev 6

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category RF MOSFET Transistors RF MOSFET Transistors
RoHS - XON Y Y
Transistor Polarity N - Channel N - Channel
Technology Si Si
Id - Continuous Drain Current 20 A 20 A
Vds - Drain-Source Breakdown Voltage 80 V 80 V
Operating Frequency 2 GHz 2 GHz
Gain 20 Db At 860 Mhz 20 Db At 860 Mhz
Output Power 150 W 150 W
Configuration Dual Dual
Pd - Power Dissipation 269 W 269 W
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case M246 M246
Packaging Bulk Bulk
Vgs - Gate-Source Voltage 15 V 15 V
Series Let9150 Let9150
Brand Stmicroelectronics Stmicroelectronics
Gate-Source Breakdown Voltage 15 V 15 V
Factory Pack Quantity : 20 20
Type Rf Power Mosfet Rf Power Mosfet
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Rf Mosfet Transistors Rf Mosfet Transistors
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000