Product Information

M24C02-WBN6P

M24C02-WBN6P electronic component of STMicroelectronics

Datasheet
EEPROM 2.5-5.5V 2K (256x8)

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8296 ea
Line Total: USD 0.83

77 - Global Stock
Ships to you by
Tue. 30 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
77 - Warehouse 1


Ships to you by Tue. 30 Apr

MOQ : 1
Multiples : 1

Stock Image

M24C02-WBN6P
STMicroelectronics

1 : USD 0.8296
25 : USD 0.4148
50 : USD 0.3733
75 : USD 0.3111
100 : USD 0.28

     
Manufacturer
Product Category
Package / Case
Interface Type
Memory Size
Organisation
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Clock Frequency
Packaging
Brand
Memory Interface Type
Memory Case Style
No. Of Pins
Product Range
Svhc
Base Number
Device Marking
Ic Generic Number
Logic Function Number
Memory Density
Memory Type
Memory Voltage Vcc
Operating Temperature Range
Supply Voltage Range
Termination Type
LoadingGif

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M24C01/02-W M24C01/02-R M24C02-F 1-Kbit and 2-Kbit serial IC bus EEPROMs Datasheet - production data Features 2 Compatible with all I C bus modes: 400 kHz 100 kHz TSSOP8 (DW) Memory array: 169 mil width 1 Kbit (128 bytes) of EEPROM 2 Kbit (256 bytes) of EEPROM Page size: 16 bytes Single supply voltage: M24C01/02-W: 2.5 V to 5.5 V SO8 (MN) M24C01/02-R: 1.8 V to 5.5 V 150 mil width M24C02-F: 1.7 V to 5.5 V (full temperature range) and 1.6 V to 1.7 V (limited temperature range) Write: Byte Write within 5 ms (1) PDIP8 (BN) Page Write within 5 ms Operating temperature range: from -40 C up to +85 C Random and sequential Read modes Write protect of the whole memory array UFDFPN8 Enhanced ESD/Latch-Up protection (MC) More than 4 million Write cycles More than 200-year data retention 1. Not recommended for new designs Packages: RoHS compliant and halogen-free (ECOPACK ) September 2013 DocID024020 Rev 2 1/34 This is information on a product in full production. www.st.comContents M24C01/02-W M24C01/02-R M24C02-F Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 Signal description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.1 Serial Clock (SCL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 Serial Data (SDA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.3 Chip Enable (E2, E1, E0) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.4 Write Control (WC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.5 V (ground) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 SS 2.6 Supply voltage (V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 CC 2.6.1 Operating supply voltage (V ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 CC 2.6.2 Power-up conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.6.3 Device reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.6.4 Power-down conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 3 Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Device operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 Start condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 Stop condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.3 Data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.4 Acknowledge bit (ACK) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.5 Device addressing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.1 Write operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5.1.1 Byte Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5.1.2 Page Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5.1.3 Minimizing Write delays by polling on ACK . . . . . . . . . . . . . . . . . . . . . . 16 5.2 Read operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.2.1 Random Address Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5.2.2 Current Address Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 5.2.3 Sequential Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/34 DocID024020 Rev 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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