Product Information

M24C04-RDW6TP

M24C04-RDW6TP electronic component of STMicroelectronics

Datasheet
EEPROM 16Kbit 8Kbit 4Kbit 2Kb and 1Kb Serial

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.1405 ea
Line Total: USD 562

31040 - Global Stock
Ships to you between
Mon. 13 May to Fri. 17 May
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
7760 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 8000
Multiples : 4000

Stock Image

M24C04-RDW6TP
STMicroelectronics

8000 : USD 0.1457
12000 : USD 0.1457
28000 : USD 0.1457

31040 - WHS 2


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 4000
Multiples : 4000

Stock Image

M24C04-RDW6TP
STMicroelectronics

4000 : USD 0.1405
8000 : USD 0.1378

15520 - WHS 3


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 168
Multiples : 1

Stock Image

M24C04-RDW6TP
STMicroelectronics

168 : USD 0.2143
200 : USD 0.1915

7760 - WHS 4


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 8000
Multiples : 4000

Stock Image

M24C04-RDW6TP
STMicroelectronics

8000 : USD 0.1457

     
Manufacturer
Product Category
RoHS - XON
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Supply Voltage - Min
Supply Voltage - Max
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Operating Supply Voltage
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Product Type
Programming Voltage
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Taric
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The M24C04-RDW6TP electronic part with EEPROM from STMicroelectronics is a 4-wire serial EEPROM 8KB, 16KB, 4KB, 2KB and 1KB device. It is a low voltage/low power memory, providing 1, 0, -1 and -2 write protection. It offers an EEPROM memory capacity of 16Kbits, 8Kbits, 4Kbits, 2Kbits and 1Kbits of non-volatile storage. The memory is organized in 32 pages (256 x 8 bits). It is ideal for applications such as identification systems, measurement systems, security systems,data reading and writing,and USB connection. The M24C04-RDW6TP has multiple supply voltage ranges, allowing for operation down to 2.5V and up to 5.5V for flexibility. The device feature a fast page write time of 5ms. It has endurance of at least 1 million write cycles. It is available in a DFN-8 package, making it ideal for space saving applications.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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