Product Information

M24C04-WMN6P

M24C04-WMN6P electronic component of STMicroelectronics

Datasheet
Memory; EEPROM; I2C; 512x8bit; 2.5÷5.5V; SO8
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

332: USD 0.0979 ea
Line Total: USD 32.5

4855 - Global Stock
Ships to you between
Mon. 13 May to Fri. 17 May
MOQ: 332  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4855 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 332
Multiples : 1

Stock Image

M24C04-WMN6P
STMicroelectronics

332 : USD 0.0979
400 : USD 0.0979
1000 : USD 0.0979
2500 : USD 0.0979
5000 : USD 0.0979

1611 - WHS 2


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 5
Multiples : 1

Stock Image

M24C04-WMN6P
STMicroelectronics

5 : USD 0.2704
25 : USD 0.2288
100 : USD 0.1989
108 : USD 0.1495
297 : USD 0.1417

13840 - WHS 3


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 68
Multiples : 1

Stock Image

M24C04-WMN6P
STMicroelectronics

68 : USD 0.1397
100 : USD 0.1281
300 : USD 0.1199
500 : USD 0.1175

Read More Specifications

     
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Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Maximum Clock Frequency
Access Time
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Supply Current - Max
Series
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Additional Infomation About Product

M24C04-W M24C04-R M24C04-F 4-Kbit serial IC bus EEPROM Datasheet - production data Features 2 Compatible with I C bus modes: 400 kHz 100 kHz Memory array: TSSOP8 (DW) 169 mil width 4 Kbit (512 bytes) of EEPROM Page size: 16 byte Single supply voltage: M24C04-W: 2.5 V to 5.5 V M24C04-R: 1.8 V to 5.5 V SO8 (MN) M24C04-F: 1.7 V to 5.5 V (full temperature 150 mil width range) and 1.6 V to 1.7 V (limited temperature range) Write: Byte Write within 5 ms Page Write within 5 ms (1) Operating temperature range: PDIP8 (BN) from -40 C up to +85 C Random and sequential Read modes Write protect of the whole memory array Enhanced ESD/Latch-Up protection UFDFPN8 (MC) More than 4 million Write cycles DFN8 - 2 x 3 mm More than 200-years data retention Packages RoHS compliant and halogen-free (ECOPACK2 ) UFDFPN5 (MH) DFN5 - 1.7 x 1.4 mm October 2017 DocID023994 Rev 5 1/40 This is information on a product in full production. www.st.comContents M24C04-W M24C04-R M24C04-F Contents 1 Description . 6 2 Signal description . 8 2.1 Serial Clock (SCL) . 8 2.2 Serial Data (SDA) 8 2.3 Chip Enable (E1, E2) . 8 2.4 Write Control (WC) . 8 2.5 V (ground) . 8 SS 2.6 Supply voltage (V ) . 8 CC 2.6.1 Operating supply voltage (V ) 8 CC 2.6.2 Power-up conditions 9 2.6.3 Device reset . 9 2.6.4 Power-down conditions 9 3 Memory organization . 10 4 Device operation . 11 4.1 Start condition 12 4.2 Stop condition 12 4.3 Data input . 12 4.4 Acknowledge bit (ACK) 12 4.5 Device addressing 13 5 Instructions . 14 5.1 Write operations 14 5.1.1 Byte Write . 15 5.1.2 Page Write . 16 5.1.3 Minimizing Write delays by polling on ACK 17 5.2 Read operations 18 5.2.1 Random Address Read . 19 5.2.2 Current Address Read 19 5.2.3 Sequential Read 19 2/40 DocID023994 Rev 5

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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