M24C08-RDW6TP STMicroelectronics

M24C08-W M24C08-R M24C08-F 8-Kbit serial IC bus EEPROM Datasheet - production data Features 2 Compatible with I C bus modes: 400 kHz 100 kHz TSSOP8 (DW) Memory array: 169 mil width 8 Kbit (1 Kbyte) of EEPROM Page size: 16 byte Single supply voltage: M24C08-W: 2.5 V to 5.5 V M24C08-R: 1.8 V to 5.5 V SO8 (MN) M24C08-F: 1.7 V to 5.5 V (full temperature 150 mil width range) and 1.6 V to 1.7 V (limited temperature range) Write: Byte Write within 5 ms Page Write within 5 ms (1) PDIP8 (BN) Operating temperature range: from -40 C up to +85 C Random and sequential Read modes Write protect of the whole memory array Enhanced ESD/Latch-Up protection UFDFPN8 (MC) DFN8 - 2 x 3 mm More than 4 million Write cycles More than 200-years data retention Packages RoHS compliant and halogen-free (ECOPACK2 ) UFDFPN5 (MH) DFN5 - 1.7 x 1.4 mm WLCSP (CT) October 2017 DocID023924 Rev 6 1/43 This is information on a product in full production. www.st.comContents M24C08-W M24C08-R M24C08-F Contents 1 Description . 6 2 Signal description . 8 2.1 Serial Clock (SCL) . 8 2.2 Serial Data (SDA) 8 2.3 Chip Enable (E2) 8 2.4 Write Control (WC) . 8 2.5 V (ground) . 8 SS 2.6 Supply voltage (V ) . 9 CC 2.6.1 Operating supply voltage (V ) 9 CC 2.6.2 Power-up conditions 9 2.6.3 Device reset . 9 2.6.4 Power-down conditions 9 3 Memory organization . 10 4 Device operation . 11 4.1 Start condition 12 4.2 Stop condition 12 4.3 Data input . 12 4.4 Acknowledge bit (ACK) 12 4.5 Device addressing 13 5 Instructions . 14 5.1 Write operations 14 5.1.1 Byte Write . 15 5.1.2 Page Write . 16 5.1.3 Minimizing Write delays by polling on ACK 17 5.2 Read operations 18 5.2.1 Random Address Read . 19 5.2.2 Current Address Read 19 5.2.3 Sequential Read 19 2/43 DocID023924 Rev 6