Product Information

M93S46-WMN6P

M93S46-WMN6P electronic component of STMicroelectronics

Datasheet
Memory; EEPROM; Microwire; 2.5÷5.5V; SO8

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2929 ea
Line Total: USD 0.29

843 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
843 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

M93S46-WMN6P
STMicroelectronics

1 : USD 0.3046
10 : USD 0.2972
100 : USD 0.2968
500 : USD 0.2908
1000 : USD 0.2908
2500 : USD 0.2908

2910 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 2000
Multiples : 2000

Stock Image

M93S46-WMN6P
STMicroelectronics

2000 : USD 0.3881

68 - WHS 3


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

M93S46-WMN6P
STMicroelectronics

1 : USD 0.5265
10 : USD 0.4302
30 : USD 0.3827
100 : USD 0.334
500 : USD 0.3055
1000 : USD 0.2912

291 - WHS 4


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3
Multiples : 1

Stock Image

M93S46-WMN6P
STMicroelectronics

3 : USD 0.7319
10 : USD 0.6773
34 : USD 0.481
93 : USD 0.455
500 : USD 0.4368

843 - WHS 5


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 23
Multiples : 1

Stock Image

M93S46-WMN6P
STMicroelectronics

23 : USD 0.2972
100 : USD 0.2968
500 : USD 0.2908

2811 - WHS 6


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 23
Multiples : 1

Stock Image

M93S46-WMN6P
STMicroelectronics

23 : USD 0.3915
100 : USD 0.3902
500 : USD 0.3823

     
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M93S46-W M93S56-W M93S66-W 4 Kbit, 2 Kbit and 1 Kbit serial MICROWIRE bus EEPROM with write protection Datasheet - production data Features Compatible with MICROWIRE bus serial interface Memory array 1 Kbit, 2 Kbit or 4 Kbit of EEPROM Organized by word (16b) Page = 4 words Write PDIP8 (BN) Byte write within 5 ms Page write within 5 ms Ready/busy signal during programming User defined write protected area High-speed clock: 2 MHz Single supply voltage: 2.5 V to 5.5 V TSSOP8 (DW) Operating temperature range: 169 mil width -40 C up to +85 C. Enhanced ESD protection More than 4 million write cycles More than 200-year data retention Packages SO8 (MN) PDIP8 ECOPACK 1 150 mil width TSSOP8 ECOPACK 2 MSv35377V1 SO8 ECOPACK 2 January 2015 DocID5124 Rev 7 1/32 www.st.com This is information on a product in full production Contents M93S46-W M93S56-W M93S66-W Contents 1 Description ........................................................................................ 5 2 Signal description ............................................................................ 6 2.1 Serial data output (Q) ........................................................................ 6 2.2 Serial data input (D) .......................................................................... 6 2.3 Serial clock (C) .................................................................................. 6 2.4 Chip select (S) ................................................................................... 6 2.5 Protection register (PRE) .................................................................. 6 2.6 Write protect (W) ............................................................................... 6 2.7 V ground ........................................................................................ 6 SS 2.8 Supply voltage (V ) ......................................................................... 6 CC 2.8.1 Operating supply voltage V ............................................................. 6 CC 2.8.2 Device reset ........................................................................................ 7 2.8.3 Power-up conditions ........................................................................... 7 2.8.4 Power-down ........................................................................................ 7 3 Operating features ............................................................................ 8 4 Clock pulse counter ......................................................................... 9 5 Instructions ..................................................................................... 10 5.1 Read ............................................................................................... 12 5.2 Write enable and write disable ........................................................ 12 5.3 Write to memory array (WRITE) ...................................................... 13 5.4 Page write ....................................................................................... 14 5.5 Write all ........................................................................................... 15 5.6 Write protection and protect register ............................................... 16 6 Power-up and delivery states ........................................................ 21 6.1 Power-up state ................................................................................ 21 6.2 Initial delivery state .......................................................................... 21 7 Maximum ratings ............................................................................ 22 8 DC and AC parameters .................................................................. 23 9 Package mechanical data .............................................................. 27 10 Part numbering ............................................................................... 30 11 Revision history .............................................................................. 31 2/32 DocID5124 Rev 7

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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