MD2103DFP STMicroelectronics

MD2103DFP High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement 3 2 Tight h range at operating collector current FE 1 Fully insulated power package UL compliant TO-220FP Integrated free wheeling diode Applications Horizontal deflection output for TV Figure 1. Internal schematic diagram Description The MD2103DFP is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency briging updated performance to the horizontal deflection stage. R =65 (typ) BE Table 1. Device summary Order code Marking Package Packing MD2103DFP MD2103DFP TO-220FP Tube May 2008 Rev 1 1/9 www.st.com 9 Obsolete Product(s) - Obsolete Product(s)Electrical ratings MD2103DFP 1 Electrical ratings Table 2. Absolute maximum rating Symbol Parameter Value Unit V Collector-emitter voltage (V =0) 1500 V CES BE V Collector-emitter voltage (I =0) 700 V CEO B V Emitter-base voltage (I =0) 7 V EBO C I Collector current 6 A C I Collector peak current (t < 5ms) 9 A CM P I Base current 3 A B P Total dissipation at T 25C 38 W tot c Insulation withstand voltage (RMS) from all three leads to V 1500 V INS external heatsink T Storage temperature -65 to 150 C stg T Max. operating junction temperature 150 C J Table 3. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case max 3.3 C/W thj-case 2/9 Obsolete Product(s) - Obsolete Product(s)