Product Information

PBYR745

PBYR745 electronic component of STMicroelectronics

Datasheet
PBYR745 TO-220 7.5A SCHOTTKY DIO DE T/

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2744 ea
Line Total: USD 1.27

75 - Global Stock
Ships to you by
Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
75 - WHS 1


Ships to you by Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

PBYR745
STMicroelectronics

1 : USD 1.2744
10 : USD 0.6372
50 : USD 0.5735
250 : USD 0.4779
500 : USD 0.4301

     
Manufacturer
Product Category
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
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STPS745 Power Schottky rectifier Datasheet - production data A K Features Very small conduction losses K K Negligible switching losses Extremely fast switching Insulated package: TO-220FPAC Insulating voltage = 2000 V sine RMS A A A Avalanche capability specified TO-220AC K NC NC ECOPACK 2 compliant component for 2 DPAK on demand D PAK Description Single Schottky rectifier suited for Switch Mode Power Supply and high frequency DC to DC A converters. K TO-220FPAC Packaged either in TO-220AC, TO-220FPAC or 2 D PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. Table 1: Device summary Symbol Value IF(AV) 7.5 A V 45 V RRM Tj (max) 175 C V (typ) 0.5 V F May 2015 DocID3516 Rev 8 1/14 www.st.com This is information on a product in full production. Characteristics STPS745 1 Characteristics Table 2: Absolute ratings (limiting values, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V I Forward rms current 20 A F(RMS) 2 TO-220AC / D PAK TC = 160 C Average forward current I 7.5 A F(AV) = 0.5, square wave TO-220FPAC T = 145 C C Surge non repetitive I tp = 10 ms sinusoidal 150 A FSM forward current Repetitive peak PARM tp = 10 s, Tj= 125 C 190 W avalanche power Tstg Storage temperature range -65 to + 175 C (1) T Maximum operating junction temperature + 175 C j Notes: (1) (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal parameter Symbol Parameter Value Unit 2 TO-220AC / D PAK 3.0 R Junction to case C/W th(j-c) TO-220FPAC 5.5 Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 100 A j (1) IR Reverse leakage current V = V R RRM Tj = 125 C - 5 15 mA T = 125 C I = 7.5 A - 0.5 0.57 j F (1) VF Forward voltage drop Tj = 25 C IF = 15 A - 0.84 V T = 125 C I = 15 A - 0.65 0.72 j F Notes: (1) Pulse test: tp = 380 s, < 2% To evaluate the conduction losses use the following equation: 2 P = 0.42 x IF(AV) + 0.020 IF (RMS) 2/14 DocID3516 Rev 8

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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