PD57018STR-E

PD57018-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 18 W with 16.5dB gain 945 MHz/28 V OUT New RF plastic package PowerSO-10RF Description (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs latest LDMOS PowerSO-10RF technology mounted in the first true SMD plastic (straight lead) RF power package, PowerSO-10RF. Devices superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer Figure 1. Pin connection high reliability, is the first ST JEDEC approved, Source high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Drain Gate Table 1. Device summary Order code Package Packing PD57018-E PowerSO-10RF (formed lead) Tube PD57018S-E PowerSO-10RF (straight lead) Tube PD57018TR-E PowerSO-10RF (formed lead) Tape and reel PD57018STR-E PowerSO-10RF (straight lead) Tape and reel December 2010 Doc ID 12214 Rev 5 1/25 www.st.com 25Contents PD57018-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 PD57018-E . 6 4.2 PD57018S-E . 8 5 Test circuit 10 6 Circuit layout 12 7 Common source s-parameter 13 8 Package mechanical data 19 9 Revision history . 24 2/25 Doc ID 12214 Rev 5