Product Information

PD85006L-E

PD85006L-E electronic component of STMicroelectronics

Datasheet
Trans RF MOSFET N-CH 40V 2A 14-Pin Power Flat T/R
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6: USD 7.8907 ea
Line Total: USD 47.34

0 - Global Stock
MOQ: 6  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Warehouse 1


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 6
Multiples : 1

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PD85006L-E
STMicroelectronics

6 : USD 7.8907

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Type
Brand
Factory Pack Quantity :
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Additional Infomation About Product

PD85006L-E RF power transistor the LdmoST plastic family Features Excellent thermal stability Common source configuration P = 6 W with 15 dB gain 870 MHz / OUT 13.6 V Plastic package ESD protection PowerFLAT (5mm x 5mm) In compliance with the 2002/95/EC european directive Description Figure 1. Pin connection The PD85006L-E is a common source N-channel, enhancement-mode lateral Field- Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85006L-E boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in leadless SMD plastic RF power package , PowerFLAT. PD85006L-Es superior linearity performance makes it an ideal solution for mobile radio applications. Table 1. Device summary Order code Marking Package Packaging PD85006L-E 85006 Tape and reel PowerFLAT December 2007 Rev 1 1/17 www.st.com 17Contents PD85006L-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 2.4 Moisture sensitivity level . 4 3 Impedances 5 4 DC curves . 6 5 RF curves 7 6 Schematic and BOM . 9 7 Demoboard photo 11 8 Package mechanical data 12 9 Revision history . 16 2/17

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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