X-On Electronics has gained recognition as a prominent supplier of PD57006S-E RF MOSFET Transistors across the USA, India, Europe, Australia, and various other global locations. PD57006S-E RF MOSFET Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for RF MOSFET Transistors, ensuring timely deliveries around the world.

PD57006S-E STMicroelectronics

Name: PD57006S-E
Brand: STMicroelectronics
SKU: PD57006SE_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

PD57006S-E electronic component of STMicroelectronics

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Part No.	PD57006S-E
Manufacturer:	STMicroelectronics
Category:	RF MOSFET Transistors
Description:	Trans RF MOSFET N-CH 65V 1A 3-Pin PowerSO-10RF (Straight lead) Tube
Datasheet:	PD57006S-E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

PD57006S-E More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 MOQ : 400 Multiples : 400	400 : USD 12.5573	N/A Obsolete

0 MOQ : 1 Multiples : 1	1 : USD 16.6073 10 : USD 15.272 25 : USD 14.6412 100 : USD 13.5664 250 : USD 12.9076	N/A Obsolete

0 MOQ : 3 Multiples : 1	3 : USD 20.0076 10 : USD 18.3266 100 : USD 15.5198	N/A Obsolete

We are delighted to provide the PD57006S-E from our RF MOSFET Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PD57006S-E and other electronic components in the RF MOSFET Transistors category and beyond.

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Additional Infomation About Product

PD57006-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 6 W with 15dB gain 945 MHz / 28 V OUT New RF plastic package PowerSO-10RF (formed lead) Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in the first true SMD plastic PowerSO-10RF RF power package, PowerSO-10RF. Devices (straight lead) superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, Figure 1. Pin connection is the first ST JEDEC approved, high power SMD Source package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Drain Gate Table 1. Device summary Order code Package Packing PD57006-E PowerSO-10RF (formed lead) Tube PD57006S-E PowerSO-10RF (straight lead) Tube PD57006TR-E PowerSO-10RF (formed lead) Tape and reel PD57006STR-E PowerSO-10RF (straight lead) Tape and reel January 2011 Doc ID 12611 Rev 3 1/22 www.st.com 22Contents PD57006-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 PD57006-E . 7 4.2 PD5706S-E 9 5 Test circuit 12 6 Common source s-parameter 14 7 Package mechanical data 16 8 Revision history . 21 2/22 Doc ID 12611 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer STMicroelectronics STMicroelectronics
Product Category RF MOSFET Transistors RF MOSFET Transistors
Transistor Polarity N - Channel N - Channel
Technology Si Si
Id - Continuous Drain Current 1 A 1 A
Vds - Drain-Source Breakdown Voltage 65 V 65 V
Operating Frequency 1 GHz 1 GHz
Gain 15 dB 15 dB
Output Power 6 W (min) 6 W (min)
Configuration Single Single
Pd - Power Dissipation 20 W 20 W
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Mounting Style Smd/Smt Smd/Smt
Package / Case POWERSO - 10RF - STRAIGHT - 4 POWERSO - 10RF - STRAIGHT - 4
Packaging Rail/Tube Rail/Tube
Vgs - Gate-Source Voltage 20 V 20 V
Series Pd57006 - E Pd57006 - E
Drain Current Max 1 A 1 A
Frequency Max 945 MHz 945 MHz
Gate-Source Voltage Max 20 V 20 V
Mounting Surface Mount Surface Mount
Pin Count 3 3
Polarity N N
Type Rf Mosfet Rf Mosfet
Number Of Elements 1 1
Operating Temperature Classification military military
Channel Mode Enhancement Enhancement
Drain Efficiency 50 % 50 %
Drain-Source On-Volt 65 V 65 V
Rad Hardened No No
Operating Temp Range - 65 C to 165 C - 65 C to 165 C
Channel Type N N
Screening Level Military Military
Vswr Max 10(Min) 10(Min)
Forward Transconductance Typ 0.58(S) 0.58(S)
Input Capacitance Typ Vds 27@28v pF 27@28v pF
Output Capacitance Typ Vds 14@28v pF 14@28v pF
Power Gain Typ Vds 15 (dB) 15 (dB)
Drain Efficiency Typ 50( % ) 50( % )