SCTWA50N120 STMicroelectronics

SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 m (typ., TJ=150 C) in an HiP247 long leads package Datasheet - production data Features Very tight variation of on-resistance vs. temperature Very high operating junction temperature capability (TJ = 200 C) Very fast and robust intrinsic body diode Low capacitance Applications Solar inverters, UPS Motor drives High voltage DC-DC converters Switch mode power supplies Figure 1: Internal schematic diagram Description D(2, TAB) This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding G(1) thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly S(3) suitable for high-efficiency and high power density applications. AM01475v1 noZen Table 1: Device summary Order code Marking Package Packaging SCTWA50N120 SCT50N120 HiP247 long leads Tube April 2017 DocID029423 Rev 3 1/11 www.st.com This is information on a product in full production. Contents SCTWA50N120 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Package information ....................................................................... 8 3.1 HiP247 long leads package information ........................................ 8 4 Revision history ............................................................................ 10 2/11 DocID029423 Rev 3