SD2931-10 STMicroelectronics

SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet production data Features Gold metallization Excellent thermal stability Common source configuration P = 150 W min. with 14 dB gain 175 MHz OUT Thermally enhanced packaging for lower junction temperatures Description M174 Epoxy sealed The SD2931-10 is a gold metallized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large Figure 1. Pin connection signal applications up to 230 MHz. 4 1 The SD2931-10 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25 % lower thermal resistance), representing the best-in-class transistors for ISM applications, where reliability and ruggedness are critical factors. 3 2 3. Gate 1. Drain 4. Source 2. Source Table 1. Device summary (1) Order code Marking Base qty. Package Packaging SD2931-10W SD2931-10 25 pcs M174 Plastic tray 1. For more details please refer to Chapter 11: Marking, packing and shipping specifications. December 2012 Doc ID 7076 Rev 9 1/19 This is information on a product in full production. www.st.com 19Contents SD2931-10 Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 3 Transient thermal impedance 6 4 Impedance data . 8 5 Typical performance . 9 6 Typical performance 175 MHz 10 7 Test circuit 11 8 Typical performance 30 MHz . 13 9 Test circuit 30 MHz . 14 10 Package mechanical data 15 11 Marking, packing and shipping specifications . 17 12 Revision history . 18 2/19 Doc ID 7076 Rev 9