STA50813TR

STA508 Datasheet 40 V, 4.5 A quad power half bridge Features Multipower BCD technology Minimum input output pulse width distortion 200 m R complementary DMOS output stage dsON CMOS compatible logic input Thermal protection PowerSO-36 Thermal warning output with exposed pad up Undervoltage protection Description STA508 is a monolithic quad half bridge stage in Multipower BCD technology. The device can be used as dual bridge or reconfigured, by connecting CONFIG pin to Vdd pin, as single bridge with double current capability, and as half bridge (Binary mode) with half current capability. The device is particularly designed to make the output stage of a stereo all-digital high efficiency (DDX) amplifier capable to deliver 80 + 80 W THD = 10 % at V CC = 35 V output power on 8 load. In single BTL configuration is also capable to deliver a peak of 160 W THD = 10 % at V = 35 V on 4 load. The input pins have threshold proportional to V pin CC L voltage. Maturity status link STA508 Device summary Order code STA50813TR Package PowerSO-36 (EPU) DS3503 - Rev 6 - November 2020 www.st.com For further information contact your local STMicroelectronics sales office.STA508 Diagram 1 Diagram Figure 1. Block diagram +V V 1A CC CC 15 C30 C55 IN1A 29 M3 IN1A 1F 1000F L18 22H 17 VL 23 +3.3V OUT1A C20 CONFIG 24 16 100nF OUT1A C52 PWRDN PWRDN 25 M2 C99 14 GND1A R98 330pF PROTECTIONS 100nF 6 R57 R59 FAULT 27 & C23 8 10K 10K LOGIC 26 12 V 1B 470nF CC R63 R100 C101 TRI-STATE C58 C31 20 6 M5 100nF 100nF 11 1F C21 TH WAR 28 OUT1B 100nF TH WAR 10 IN1B 30 OUT1B L19 22H IN1B M4 V 21 13 GND1B DD V 22 DD V 33 REGULATORS SS 7 V 2A CC V 34 SS C32 M17 C58 C53 1F L113 22H 100nF 100nF V SIGN 8 CC 35 OUT2A C60 C110 9 100nF V SIGN 100nF CC 36 OUT2A C109 M15 C107 6 GND2A R103 IN2A 330pF IN2A 31 100nF 6 C108 8 GND-Reg 20 4 V 2B 470nF CC R104 R102 C106 GND-Clean 20 C33 6 19 M16 100nF 3 1F C111 OUT2B 100nF 2 IN2B IN2B 32 OUT2B L112 22H GNDSUB M14 1 5 GND2B DS3503 - Rev 6 page 2/19