Product Information

STB130N6F7

STB130N6F7 electronic component of STMicroelectronics

Datasheet
MOSFET N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in D2PAK package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.1765 ea
Line Total: USD 1176.5

1940 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 1000  Multiples: 1000
Pack Size: 1000

 More Buying Options & Price Grid(s)

Availability Price Quantity
1940 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1000
Multiples : 1000

Stock Image

STB130N6F7
STMicroelectronics

1000 : USD 1.1765
2000 : USD 1.1765
3000 : USD 1.1765
4000 : USD 1.1765
5000 : USD 1.1765

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Package Type
Operating Temperature Classification
Gate-Source Voltage Max
Drain-Source On-Volt
Number Of Elements
Operating Temp Range
Mounting
Pin Count
Rad Hardened
Polarity
Type
Continuous Drain Current
Power Dissipation
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

STB130N6F7 N-channel 60 V, 4.2 m typ., 80 A STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT TAB STB130N6F7 60 V 5.0 m 80 A 160 W Among the lowest R on the market DS(on) 3 Excellent figure of merit (FoM) 1 Low C /C ratio for EMI immunity rss iss High avalanche ruggedness 2 D PAK Applications Switching applications Figure 1: Internal schematic diagram Description This N-channel Power MOSFET utilizes D(2, TAB) STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. G(1) S(3) AM01475v1 Tab Table 1: Device summary Order code Marking Package Packing STB130N6F7 130N6F7 DPAK Tape and reel December 2015 DocID027380 Rev 5 1/14 www.st.com This is information on a product in full production. Contents STB130N6F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ..................................................................................... 7 4 Package information ....................................................................... 8 4.1 DPAK (TO-263) type A package information ................................... 8 4.2 DPAK packing information ............................................................. 11 5 Revision history ............................................................................ 13 2/14 DocID027380 Rev 5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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