STB130N6F7 STMicroelectronics

STB130N6F7 N-channel 60 V, 4.2 m typ., 80 A STripFET F7 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT TAB STB130N6F7 60 V 5.0 m 80 A 160 W Among the lowest R on the market DS(on) 3 Excellent figure of merit (FoM) 1 Low C /C ratio for EMI immunity rss iss High avalanche ruggedness 2 D PAK Applications Switching applications Figure 1: Internal schematic diagram Description This N-channel Power MOSFET utilizes D(2, TAB) STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. G(1) S(3) AM01475v1 Tab Table 1: Device summary Order code Marking Package Packing STB130N6F7 130N6F7 DPAK Tape and reel December 2015 DocID027380 Rev 5 1/14 www.st.com This is information on a product in full production. Contents STB130N6F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ..................................................................................... 7 4 Package information ....................................................................... 8 4.1 DPAK (TO-263) type A package information ................................... 8 4.2 DPAK packing information ............................................................. 11 5 Revision history ............................................................................ 13 2/14 DocID027380 Rev 5