STB13NM60N STMicroelectronics

STB13NM60N, STD13NM60N N-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFETs in DPAK and DPAK packages Datasheet production data Features Order code V ( Tjmax) R max I DS DS(on) D STB13NM60N TAB 650 V 0.36 11 A TAB STD13NM60N 3 100% avalanche tested 3 1 1 Low input capacitance and gate charge DPAK DPAK Low gate input resistance Applications Switching applications Figure 1. Internal schematic diagram Description % 7 RU These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the companys strip layout to yield one of the worlds * lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6 6& Table 1. Device summary Order code Marking Packages Packaging STB13NM60N DPAK 13NM60N Tape and reel STD13NM60N DPAK June 2015 DocID024095 Rev 3 1/24 This is information on a product in full production. www.st.comContents STB13NM60N, STD13NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package information 10 2 4.1 D PAK package information . 10 4.2 DPAK package information . 15 5 Packing information 20 6 Revision history . 23 2/24 DocID024095 Rev 3