STB12NM50N STMicroelectronics

STB12NM50ND STD12NM50ND, STF12NM50ND N-channel 500 V, 0.29 , 11 A, FDmesh II Power MOSFET 2 (with fast diode) in D PAK, DPAK, TO-220FP Features Type V ( Tjmax) R max I DSS DS(on) D STB12NM50ND 550 V 0.38 11 A STD12NM50ND 550 V 0.38 11 A STF12NM50ND 550 V 0.38 11 A 3 3 3 2 1 1 1 100% avalanche tested 2 DPAK TO-220FP D PAK Low input capacitance and gate charge Low gate input resistance Application Switching applications Figure 1. Internal schematic diagram Description FDmesh technology combines the MDmesh features with an intrinsic fast-recovery body diode. The resulting product has reduced on- resistance and fast switching commutations, making it especially suitable for bridge topologies where low t is required. rr 3 - V Table 1. Device summary Order codes Marking Package Packaging 2 STB12NM50ND 12NM50ND D PAK Tape and reel STD12NM50ND 12NM50ND DPAK Tape and reel STF12NM50ND 12NM50ND TO-220FP Tube June 2009 Doc ID 14936 Rev 2 1/16 www.st.com 16 Contents STB12NM50ND, STD12NM50ND, STF12NM50ND Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 13 6 Revision history . 15 2/16 Doc ID 14936 Rev 2