STB21NK50Z STMicroelectronics

STB21NK50Z Automotive grade N-channel 500 V, 0.23 , 17 A, Zener-protected 2 SuperMESH Power MOSFET in a D PAK package Datasheet - production data Features V R max I P Order code DS DS(on) D W TAB STB21NK50Z 500 V 0.27 17 A 190 W Designed for automotive applications and AEC-Q101 qualified 3 1 Extremely high dv/dt capability DPAK 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. Internal schematic diagram Applications D(2) Switching applications Description This device is an N-channel Zener-protected G(1) Power MOSFET developed using STMicroelectronics SuperMESH technology, achieved through optimization of ST s well established strip-based PowerMESH layout. In addition to a significant reduction in on- resistance, this device is designed to ensure a S(3) high level of dv/dt capability for the most AM16160v1 demanding applications. Table 1. Device summary Order code Marking Packages Packaging STB21NK50Z 21NK50Z DPAK Tape and reel September 2014 DocID15026 Rev 2 1/15 This is information on a product in full production. www.st.comContents STB21NK50Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Packaging mechanical data 11 6 Revision history . 13 2/15 DocID15026 Rev 2