STB23N80K5 Datasheet N-channel 800 V, 0.23 typ., 16 A MDmesh K5 Power MOSFET in a DPAK package Features TAB V R max. I P Order code DS DS(on) D TOT STB23N80K5 800 V 0.28 16 A 190 W 2 3 1 Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) D P AK Ultra-low gate charge 100% avalanche tested D(2, TAB) Zener-protected Applications G(1) Switching applications S(3) Description NG1D2TS3Z This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STB23N80K5 Product summary Order code STB23N80K5 Marking 23N80K5 Package DPAK Packing Tape and reel DS11240 - Rev 2 - May 2021 www.st.com For further information contact your local STMicroelectronics sales office.STB23N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 30 V GS Drain current (continuous) at T = 25 C 16 C I A D Drain current (continuous) at T = 100 C 10 C (1) I Drain current (pulsed) 64 A DM P Total power dissipation at T = 25 C 190 W TOT C (2) dv/dt Peak diode recovery voltage slope 4.5 V/ns (3) MOSFET dv/dt ruggedness 50 dv/dt T Storage temperature range stg -55 to 150 C T Operating junction temperature range J 1. Pulse width is limited by safe operating area. 2. I 16 A, di/dt=100 A/s V < V , V = 80% V . SD DS(peak) (BR)DSS DD (BR)DSS 3. V 640 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance, junction-to-ambient 0.66 thJC C/W (1) R Thermal resistance, junction-to-board 30 thJA 1. When mounted on 1-inch FR-4, 2 Oz copper board. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 5 A AR (2) E Single pulse avalanche energy 400 mJ AS 1. Pulse width limited by T . Jmax 2. Starting T = 25 C, I = I , V = 50 V. J D AR DD DS11240 - Rev 2 page 2/19