STB34N50DM2AG STMicroelectronics

STB34N50DM2AG Automotive-grade N-channel 500 V, 0.10 typ., 26 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features R DS(on) Order code VDS ID PTOT TAB max. STB34N50DM2AG 500 V 0.12 26 A 190 W 3 Designed for automotive applications and 1 AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input 2 D PAK capacitance Low on-resistance 100% avalanche tested Figure 1: Internal schematic diagram Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (t ) combined with low R , rendering rr DS(on) it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STB34N50DM2AG 34N50DM2 DPAK Tape and reel August 2015 DocID028248 Rev 1 1/15 www.st.com This is information on a product in full production. Contents STB34N50DM2AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK (TO-263) type A package information ................................... 9 4.2 DPAK packing information ............................................................. 12 5 Revision history ............................................................................ 14 2/15 DocID028248 Rev 1